CEP110P03 CET-MOS | Alldatasheet
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Technical content
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -105.5A, RDS(ON) =5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. S G D G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 CEP110P03/CEB110P03 RoHS compliant. Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1.3RqJC RqJA ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM -30 0.77 -422 -105.5 ±20 V W A A V W/ C Drain Current-Continuous @ TC = 25 C @ TC = 100 C -69 A Operating and Store Temperature Range TJ,Tstg -55 to 150 C Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e EAS IAS 612.5 mJ A http://www.cet-mos.com Rev 2. 2011.Dec Details are subject to change without notice . RDS(ON) =8.5mW @VGS = -4.5V.
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 5.84.7 -1 -3 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -30A VGS = -4.5V, ID = -20A VDD = -15V, ID = -1A, VGS = -10V, RGEN= 6W VDS = -15V, ID = -15A, VGS = -4.5V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -20A 4125 910 610 224 -80 -1.2 8.56.2 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.L = 1mH, IAS = 35A, VDD = 24V, RG = 25W, Starting TJ = 25 C