CEP07N7 CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 700 1.3 166 26.4 6.6 ±30 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP07N7 CEF07N7 700V 700V 1.5W 1.5W 6.6A 6.6A d 10V 10V 0.4 26.4d 6.6d CEB07N7 700V 1.5W 6.6A 10V TO-220/263 TO-220F http://www.cet-mos.comDetails are subject to change without notice . Rev 4. 2012.Nov Repetitive Avalanche Energy Single Pulsed Avalanche Energy h EAR EAS 3.6 38.88 mJ mJ Lead-free plating ; RoHS compliant. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.75RqJC RqJA 2.5
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 1.51.3 2 4 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS f VSD g Typ Max 700 VDS =700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 3.5A VDD = 300V, ID =6.6A, VGS = 10V, RGEN = 25W VDS = 480V,ID = 6.6A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 5A 1215 125 6.6 1.4 pF pF pF ns ns ns ns nC nC nC A V CEP07N7/CEB07N7 CEF07N7 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 3.2A . g.Full package VSD test condition IS = 3.2A . H.L = 6mH, IAS =3.6A, VDD = 50V, RG = 25W, Starting TJ = 25 C.