CEP07N65LN CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 650 0.55 6.5 ±30 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP07N65LN CEF07N65LN 650V 650V 0.65W 0.65W 6.5A 6.5A d 10V 10V 0.26 26 d 6.5 d CEB07N65LN 650V 0.65W 6.5A 10V RoHS compliant. TO-220/263 TO-220F http://www.cet-mos.com Rev 1. 2019.Oct Drain Current-Continuous @ TC = 25 C @ TC = 100 C A4.1 4.1 d Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1.8RqJC RqJA 3.8 Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h EAS IAS 120 mJ A Details are subject to change without notice .
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.650.55 2.5 4.5 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Typ Max 650 VDS = 650V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 3.5A VDD = 300V, ID =3.5A, VGS = 15V, RGEN = 10W VDS = 480V, ID = 3.5A, VGS = 10V VDS = 150V, VGS = 0V, f = 1.0 MHz 500 2.5 4.0 6.5 1.5 pF pF pF ns ns ns ns nC nC nC A V IS f VGS = 0V, IS = 3.5A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 4.5A . g.Full package VSD test condition IS = 4.5A . h.L = 60mH, IAS = 2A, VDD = 50V, RG = 25W, Starting TJ = 25 C. CEP07N65LN/CEB07N65LN CEF07N65LN
Figure 12. Normalized Thermal Transient Impedance Curve