CEP05P03 CET-MOS | Alldatasheet
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Technical content
P-Channel Enhancement Mode Field Effect Transistor CEP05P03/CEB05P03
FEATURES
-30V, -18A,RDS(ON) = 70mW @VGS = -10V. RDS(ON) = 120mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM -30 -50 -18 ±20 V W A A V 4 - 22 S G D G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 Lead free product is acquired. 2002.May http://www.cet-mos.com Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 RqJC RqJA 3.2
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 7042 -1 -3 -100 100 mW V nA nA µA V S 4 - 23 Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -2A VDS = -15V, ID = -4.9A VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6W VDS = -15V, ID = -4.9A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.7A 1040 420 150 22.5 -18 -1.2-0.79 12078 -1.5 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.