CEP02N6G CET-MOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 600 0.48 8.8 1.4 ±30 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP02N6G CEF02N6G 600V 600V 2.2A 2.2A d 10V 10V TO-220/263 TO-220F 0.26 8.8 d 1.4d CEP02N6G/CEB02N6G CEF02N6G CEB02N6G Lead free product is acquired. 600V 5W 2.2A 10V http://www.cet-mos.comDetails are subject to change without notice . Rev 5. 2011.Feb Drain Current-Continuous @ TC = 25 C @ TC = 100 C 2.2 2.2 d A Single Pulsed Avalanche Energy g Single Pulsed Avalanche Current g EAS IAS 11.25 1.5 mJ A Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 2.1RqJC RqJA 3.8
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 53.8 2 4 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Typ Max 600 VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 1A VDD = 300V, ID = 1A, VGS = 10V, RGEN = 18W VDS = 480V, ID = 1A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz 290 6.8 1.4 3.1 1.5 pF pF pF ns ns ns ns nC nC nC A V CEP02N6G/CEB02N6G CEF02N6G IS f VSD Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 1.5A . VGS = 0V, IS = 1A g.L = 10mH, IAS =1.5A, VDD = 50V, RG = 25W, Starting TJ = 25 C