CEM8208 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This Dual N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=20V,ID=6.5A,RDS(ON)<24mΩ@VGS=4.5V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±10 V ID Continuous Drain Current-1a 6.5 A Continuous Drain Current-TC=100℃ --- Pulsed Drain Current 20 EAS Single Pulse Avalanche Energy --- mJ PD Power Dissipation1a 1.6 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJc Maximum Junction-to-Lead1 40 ℃/W RƟJA Thermal Resistance,Junction to Ambient1a 78 D2S1 CEM 8208 All d ata sheet.com
www.doingter.cn — 2 — Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 20 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=16V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±10V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 0.5 1 1.5 V RDS(ON) Drain-Source On Resistance VGS=4.5V,ID=6.5A --- 19 24 mΩ GFS Forward Transconductance VDS=5V, ID=3A --- 11 --- S Dynamic Characteristics Ciss Input Capacitance VDS=10V, VGS=0V, f=1MHz --- 700 --- pF Coss Output Capacitance --- 175 --- Crss Reverse Transfer Capacitance --- 85 --- Switching Characteristics td(on) Turn-On Delay Time VDS=10V, ID=1A RGEN=6Ω. VGS=4.5V, --- 8 16 ns tr Rise Time --- 10 18 ns td(off) Turn-Off Delay Time --- 18 29 ns tf Fall Time --- 5 10 ns Qg Total Gate Charge VGS=4.5V, VDS=10V, ID=3A --- 7 10 nC Qgs Gate-Source Charge --- 1.2 --- nC Qgd Gate-Drain “Miller” Charge --- 1.9 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=1.3A --- 0.7 1.2 V ls Maximum Body-Diode Continuous Current --- --- 1.3 CEM 8208 Electrical Characteristics：(TC=25℃ unless otherwise noted) All d ata sheet.com
www.doingter.cn — 3 — Notes: CEM 8208 All d ata sheet.com
www.doingter.cn — 4 — Typical Characteristics： (TC=25℃ unless otherwise noted) CEM 8208 All d ata sheet.com
— 5 — CEM 8208 0086-0755-8278-9056 www.doingter.cn All d ata sheet.com