CEM6659

CEM6659 DOINGTER | Alldatasheet

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Description： This N-Chanel and P-Channel MOSFET use advanced trench technology to provide excellent RDS(ON), low gate charge. This device may be used to form a level shifted high side switch, and for a host of other application. Features： N-Channel: V DS=60V,ID=4.5A,RDS(ON)<40mΩ@VGS=10V P-Channel: V DS=-60V,ID=-4.1A,RDS(ON)<90mΩ@VGS=-10V 1) High Power and current handing capability. 2) Lead free product is acquired. 3) Surface Mount Package. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter N-Channel P-Channel Units VDS Drain-Source Voltage 60 -60 V VGS Gate-Source Voltage ±20 ±20 V ID Drain Current-Continuous @TA=25℃ 4.5 -4.1 ADrain Current-Continuous @T =70℃1 A 3.5 -3.2 IDM Pulsed Drain Current-2 18 -14 EAS Single PulseAvalancheEnergy3 22 29.7 mJ IAS AvalancheCurrent 21 24.2 A PD Power Dissipation4 1.5 1.5 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 -55 to +150 ℃ Thermal Characteristics： Symbol Parameter N-Channel Max P-Channel Max Units RƟJA Thermal Resistance,Junction to Ambient1 85 85 ℃/W RƟJAC Thermal Resistance,Junction Case1 25 25 www.doingter.cn — 1 — All d ata sheet.com

N-Channel Electrical Characteristics：(TC=25℃ unless otherwise noted) i www.doingter.cn — 2 — Symbol Parameter Conditions Min Typ Max Units ON/Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=48V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 2.5 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=4A --- --- 40 mΩ VGS=4.5V,ID=3A --- --- 50 GFS Forward Transconductance VDS=5V, ID=4A --- 28.3 --- S Rg GateResistance VDS=0V, VGS=0V,f=1MHz --- 2.5 --- Ω Dynamic Characteristcs Ciss Input Capacitance --- 1027 --- Coss Output Capacitance VDS=15V, VGS=0V, f=1MHz --- 65 --- pF Crss Reverse Transfer Capacitance --- 46 --- Switching Characteristics td(on) Turn-On Delay Time VDD=30V, ID=4A, RG=3.3Ω VGS=10V --- 3 --- ns tr Rise Time --- 34 --- ns td(off) Turn-Off Delay Time --- 23 --- ns tf Fall Time --- 6 --- ns Qg Total Gate Charge（4.5V） --- 19 --- nC Qgs Gate-Source Charge VGS=10V, VDS=48V, --- 2.6 --- nC Qgd Gate-Drain “Miller” Charge ID=4A --- 4.1 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS =1A, TJ=25℃ --- --- 1.2 V All d ata sheet.com

VGS=10V VGS=7V VGS=5V VGS=4.5V VGS=3V IDDrain Current(A) RDSON(mΩ) IS ContinuousSourceCurrent 1,5 VG=VD=0V ,Force Current --- --- 4.5 A ISM PulsedSourceCurrent 2,5 --- --- 18 trr ReverseRecoveryTime IF=4A, dI/dt=100A/µs, TJ=25℃ --- 12.1 --- nS Qrr ReverseRecoveryCharge --- 6.7 --- nC Notes: 1.Thedata testedbysurfacemounted ona 1inch 2FR-4board with2OZcopper. 2.Thedata testedbypulsed,pulsewidth ≦ 300us,dutycycle ≦ 2% 3.TheEASdata showsMax. rating.The testconditionisV DD=25V,VGS=10V,L=0.1mH,IAS=21A 4.Thepower dissipation islimitedby150 ℃ junctiontemperature 5.Thedata istheoreticallythesameasI DandIDM,in realapplications,shouldbe limitedbytotalpower dissipation. Typical Characteristics： (TC=25℃ unless otherwise noted) 20 60 15 53 10 45 5 38 0 0.5 1 1.5 2 2.5 VDS ,Drain-to-Source Voltage (V) 2 4 6 8 10 VGS (V) Fig.1 TypicalOutputCharacteristics Fig.2 On-Resistance vs.Gate-Source 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) Fig.3Forward CharacteristicsOfReverse Fig.4 Gate-Charge Characteristics www.doingter.cn — 3 — ID=4A TJ=150℃ TJ=25℃ IS-SourceCurrent(A) All d ata sheet.com

Normalized VGS(th) Normalized On Resistance 1.8 1.4 0.6 2.2 1.8 1.4 1.0 0.6 0.2 -50 0 50 100 150 TJ ,Junction Temperature (℃) Fig.5 Normalized VGS(th)vs. TJ 0.2 -50 0 50 100 150 TJ ,Junction Temperature (℃) Fig.6Normalized RDSONvs. TJ 10000 1000 100 F=1.0MHz Ciss Coss Crss 1 5 9 13 17 21 25 VDS Drain to Source Voltage(V) Fig.7Capacitance Fig.8Safe Operating Area 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 t , PulseWidth (s) 10 100 1000 Fig.9Normalized Maximum Transient Thermal Impedance www.doingter.cn — 4 — DUTY=0.5 0.2 0.1 0.05

0.01 PDM TON

T SINGLE D = TON/T TJpeak = TA+PDMXRθJA NormalizedThermalResponse(R θJA) Capacitance(pF) All d ata sheet.com

Figure11. Normalized Maximum Transient Thermal Impedance P-Channel Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ON/Off States BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=-250μA -60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-48V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -1.2 --- -2.5 V RDS(ON) Drain-Source On Resistance2 VGS=-10V,ID=-3A --- --- 90 mΩ VGS=-4.5V,ID=-2A --- --- 115 GFS Forward Transconductance VDS=-5V, ID=-3A --- 8.7 --- S Rg GateResistance VDS= 0 V, VGS=0V, f=1MHz --- 15 --- Ω Dynamic Characteristics Ciss Input Capacitance --- 1080 --- Coss Output Capacitance VDS=-15V, VGS=0V, f=1MHz --- 73 --- pF Crss Reverse Transfer Capacitance --- 50 --- Switching Characteristics td(on) Turn-On Delay Time VDD=-15V, GS=-10V, --- 8.8 --- ns www.doingter.cn — 5 — All d ata sheet.com

VGS=-10V VGS=-7V VGS=-5V VGS=-4.5V VGS=-3V TJ=150℃ TJ=25℃ GS tr Rise Time RGEN=3.3Ω,ID=-1A --- 19.6 --- ns td(off) Turn-Off Delay Time --- 47.2 --- ns tf Fall Time --- 9.6 --- ns Qg Total Gate Charge（-4.5V） --- 11.8 --- nC Qgs Gate-Source Charge VGS=-4.5V, VDS=-48V, --- 1.9 --- nC Qgd Gate-Drain “Miller” Charge ID=-3A --- 6.5 --- nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=-6.5A --- --- -1.2 V IS ContinuousSource Current1,5 VG=VD=0v, ,Force Current --- --- -4.1 A ISM DiodeForwardVoltage 2 --- --- -14 Notes: 1.Thedatatestedbysurfacemountedon a 1inch 2 FR-4 boardwith2OZ copper. 2.Thedatatestedbypulsed,pulsewidth ≦ 300us ,dutycycle ≦ 2% 4.Thepower dissipationislimitedby150 ℃ junction temperature 5.ThedataistheoreticallythesameasI Dand IDM,inreal applications,shouldbe limitedbytotalpower dissipation. Typical Characteristics： (TC=25℃ unless otherwise noted) 10 80 0 0.5 1 1.5 2 -VDS ,Drain-to-Source Voltage (V) 2 4 (V) 8 10 Fig.1 TypicalOutputCharacteristics Fig.2On-Resistance v.sGate-Source 12 10 0.2 0.4 0.6 0.8 1 -VSD , Source-to-DrainVoltage (V) 0 7 14 21 QG , Total Gate Charge (nC) Fig.3 Forward CharacteristicsofReverse Fig.4 Gate-Charge Characteristics www.doingter.cn — 6 — VDS=-20V ID=-3A ID=-3A -IDDrain Current(A)-ISSource Current(A) RDSON(mΩ)-VGSGatetoSource Voltage (V) All d ata sheet.com

F=1.0MHz Crss Coss Ciss NormalizedVGS(th) NormalizedOnResistance 1.5 2.2 1.8 1.4 1.0 0.5 0.6 -50 0 50 100 150 TJ ,JunctionTemperature(℃) Fig.5NormalizedVGS(th) vs.TJ 0.2 -50 0 50 100 150 TJ ,JunctionTemperature(℃) Fig.6Normalized RDSON vs.TJ 10000 10.00 1000 1.00 100 0.10 1 5 9 13 17 21 25 -VDS ,Drain to Source Voltage(V) 0.01 0.1 1 10 DS (V) 100 1000 Fig.7Capacitance Fig.8SafeOperating Area 100us Tc=25oC SinglePulse 1ms 10ms 100ms DC Capacitance (pF) -ID(A) www.doingter.cn — 7 — All d ata sheet.com

0.1 0.01 t ,Pulse Width (s) Fig.9NormalizedMaximumTransient ThermalImpedance DUTY=0.5 0.3 0.1

0.05 PDM TON

0.02 T D = TON/T

0.01 SINGLEPULSE TJpeak=TC +PDM xRθJC

NormalizedThermalResponse(RθJC) 0086-0755-8278-9056 www.doingter.cn — 8 — All d ata sheet.com