CEM6188A CET-MOS | Alldatasheet
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Specification and data are subject to change without notice . Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 7.4A, RDS(ON) = 23mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.0 29.6 7.4 ±20 V W A A V SO-8 D1 D1 D2 D2 S1 G1 S2 G2 8 7 6 5 1 2 3 4 RoHS compliant. CEM6188A http://www.cet-mos.com Rev 1. 2022.March Operating and Store Temperature Range TJ,Tstg -55 to 150 C RDS(ON) = 31mW @VGS = 4.5V. Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol C/W62.5RqJA Limit Units
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2317 1 3 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 60V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6A VDD = 30V, ID = 7A, VGS = 10V, RGEN = 4.7W VDS = 48V, ID = 7A, VGS = 4.5V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 1.5A 780 115 1.6 1.2 pF pF pF ns ns ns ns nC nC nC A V 3122 mW VGS = 4.5V, ID = 4A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
Figure 12. Normalized Thermal Transient Impedance Curve