CEM4948 DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-60V,ID=-3.2A,RDS(ON)<105mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ -3.2 A Continuous Drain Current-TC=100℃ -2.56 Pulsed Drain Current1 -12.8 EAS Single Pulse Avalanche Energy 25 mJ PD Power Dissipation 2.02 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 23 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62 G D D D DS1 S S CEM 4948 All d ata sheet.com
www.doingter.cn — 2 — Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA -60 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-60V, TJ=25℃ --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA -1.0 -1.6 -2.5 V RDS(ON) Drain-Source On Resistance2 VGS=-10V,ID=-3A --- 87 105 mΩ VGS=-4.5V,ID=-2A --- 120 145 GFS Forward Transconductance VDS=-10V, ID=-3A --- 5.5 --- S Dynamic Characteristics Ciss Input Capacitance VDS=-30V, VGS=0V, f=1MHz --- 785 1300 pF Coss Output Capacitance --- 175 300 Crss Reverse Transfer Capacitance --- 112 220 Switching Characteristics td(on) Turn-On Delay Time2,3 VDS=-30V, VGS=-10V ID=-1A,RGEN=6Ω --- 8 16 ns tr Rise Time2,3 --- 15.4 30 ns td(off) Turn-Off Delay Time2,3 --- 42.8 80 ns tf Fall Time2,3 --- 8.4 16 ns Qg Total Gate Charge2,3 VDS=-30V , VGS=-4.5V , ID=-2A --- 10 15 nC Qgs Gate-Source Charge 2,3 --- 1.6 3.2 nC Qgd Gate-Drain “Miller” Charge2,3 --- 3 6 nC Drain-Source Diode Characteristics VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=-1A, TJ=25℃ --- --- -1 V CEM 4948 Electrical Characteristics：(TC=25℃ unless otherwise noted) All d ata sheet.com
www.doingter.cn — 3 — LS Continuous Source Current --- -3.2 A LSM Pulsed Source Current --- -6.4 A Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) VG=VD=0V , Force Current 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-18A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. TJ , Junction Temperature (℃) Fig.1 Continuous Drain Current vs. TJ Normalized On Resistance (m) TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform -ID , Continuous Drain Current (A)Normalized Gate Threshold V oltage(V) CEM 4948 All d ata sheet.com
— 4 — Normalized Thermal Response (RθJC) -ID , Continuous Drain Current (A) Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 EAS Waveform Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance -VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area CEM 4948 0086-0755-8278-9056 www.doingter.cn All d ata sheet.com