CEM4269 CET-MOS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM4269

FEATURES

40V, 6.1A, RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 46mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.0 6.1 ±20 V W V SO-8 D1 D1 D2 D2 S1 G1 S2 G2 8 7 6 5 1 2 3 4 Lead free product is acquired. Channel 2 -40 ±20 -40V, -5.2A, RDS(ON) = 43mW @VGS = 10V. RDS(ON) = 65mW @VGS = 4.5V. -20 -5.2 A TA=25 C TA=70 C 4.9 -4.2 TA=25 C TA=70 C 1.28 Operating and Store Temperature Range TJ,Tstg -55 to 150 C http://www.cet-mos.com Rev 2. 2010.Aug Specification and data are subject to change without notice . Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RqJA

N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 1 3 -100 100 mW V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6A VGS = 4.5V, ID = 5A VDS = 5V, ID = 6A VDD = 20V, ID = 6A, VGS = 10V, RGEN =3W VDS = 20V, ID = 6A, VGS = 10V VDS = 20V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 1.0A 1050 155 20.5 3.5 4.0 1.0 1.0 46 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. CEM4269

P-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF -1 -3 -100 100 mW V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -40 VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -5A VGS = -4.5V, ID = -2A VDS = -5V, ID = -4.8A VDD = -20V, ID = -5A, VGS = -10V, RGEN = 3W VDS = -20V, ID = -5A, VGS = -10V VDS = -20V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.0A 1125 150 100 2.5 3.5 -1.0 -1.0 65 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.