CEM4228 DOINGTER | Alldatasheet
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www.doingter .cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=6.7A,RDS(ON) <32mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON) . 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain -Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current – Continuous (T C=25℃ ) 6.7 A Drain Current – Continuous (T C=100℃ ) 4.3 IDM Drain Current – Pulsed 1 26.8 PD Power Dissipation (T C=25℃ ) 2.5 W Power Dissipation – Derate above 25 ℃ 0.02 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 50 ℃/W RƟJA Thermal Resistance,Junction to Ambient 62 G D D D DS1 S S CEM4228 All d ata sheet.com
www.doingter .cn — 2 — Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain -Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25 ℃ , IDSS Drain -Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate -Source Leakage Current VGS=±20V, VDS=0V --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 1.8 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -3 --- mV/℃ RDS(ON) Static Drain-Source On Resistance VGS=10V,ID=5A --- 24 32 mΩ VGS=4.5V,ID=3A --- 32 45 GFS Forward Transconductance VDS=10V, ID=10A --- 18 --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 420 800 pF Coss Output Capacitance --- 65 120 Crss Reverse Transfer Capacitance --- 40 80 Switching Characteristics td(on) Turn-On Delay Time 2,3 VDD=20V, ID=1A, RGEN=25Ω, VGS=4.5V --- 3.2 6 ns tr Ris e Time2,3 --- 8.6 16 ns td(off) Turn-Off Delay Time2,3 --- 18 36 ns tf Fall Time 2,3 --- 6 12 ns CEM4228 Electrical Characteristics：(TC=25℃ unless otherwise noted) All d ata sheet.com
Normalized RDSON vs. T www.doingter .cn — 3 — Qg Total Gate Charge 2,3 VGS=4.5V, VDS=20V, ID=3A --- 2.8 5.6 nC Qgs Gate -Source Charge 2,3 --- 0.5 1 nC Qgd Gate -Drain “Miller” Charge2,3 --- 1.5 3 nC Drain-Source Diode Characteristics VSD Source -Drain Diode Forward Voltage3 VGS=0V,IS=1A,TJ=25℃ --- --- 1 V IS Continuous Source Current VG=VD=0V , Force Current --- --- 6.7 A ISM Puls ed Source Current --- --- 13.4 A Notes: 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Typical Characteristics： (T =25℃ unless otherwise noted) ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance (m) Fig.2 J TC , Case Temperature (℃) TJ , Junction Temperature (℃) CEM4228 All d ata sheet.com
— 4 — 0086-0755-8278-9056 www.doingter.cn Fig.6 Maximum Safe Operation Area Normalized Gate Threshold V oltage(V) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJA) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) Qg , Gate Charge (nC)TJ , Junction Temperature (℃) Square W ave Pulse Duration (s) VDS , Drain to Source V oltage (V) CEM4228 All d ata sheet.com