CEM3405L CET-MOS | Alldatasheet
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Technical content
http://www.cet-mos.com Rev 2. 2006.Sep Details are subject to change without notice . P-Channel Enhancement Mode Field Effect Transistor CEM3405L
FEATURES
-30V, -5.7A, RDS(ON) = 48mW @VGS = -10V. RDS(ON) = 62mW @VGS = -4.5V. RDS(ON) = 115mW @VGS = -2.5V. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -30 2.5 -22.8 -5.7 ±12 V W A A V SO-8 D D D D S S S G 1 2 3 4 8 7 6 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W50RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 4840 -0.6 -1.4 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -30V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -5.7A VGS = -4.5V, ID = -4.6A VGS = -2.5V, ID = -3.7A VDD = -15V, ID= -4A, VGS = -10V, RGEN = 6W VDS = -15V, ID = -4A, VGS = -4.5V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1A 770 130 -2.5 115 mW mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.