CEM3317 CET-MOS | Alldatasheet
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Technical content
http://www.cet-mos.com Rev 2. 2006.Dec Details are subject to change without notice . P-Channel Enhancement Mode Field Effect Transistor CEM3317
FEATURES
-30V, -6.2A, RDS(ON) = 33mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. SO-8 RoHS compliant. D1 D1 D2 D2 S1 G1 S2 G2 8 7 6 5 1 2 3 4 -30V, -4.9A, RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 85mW @VGS = -4.5V. Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RqJA ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM -30 2.0 -25 -6.2 ±20 V W A A V Channel 2 -30 ±20 -20 -4.9 Operating and Store Temperature Range TJ,Tstg -55 to 150 C
Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 3327 -1 -3 -100 100 mΩ V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -6.2A VGS = -4.5V, ID = -4A VDS = -10V, ID = -6.2A VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω VDS = -15V, ID = -6.2A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1A 1150 250 150 115 4.0 2.5 -6.2 -1.2 5240 mΩ pF pF pF ns ns ns ns nC nC nC A V P-Channel(Q1) Electrical Characteristics TA = 25 C unless otherwise noted Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 5242 -1 -3 -100 100 mΩ V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = -15V, ID = -4.9A VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω VDS = -15V, ID = -4.9A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -4.9A 845 155 118 13.8 1.8 2.2 18.3 -4.9 -1.2 8565 mΩ pF pF pF ns ns ns ns nC nC nC A V P-Channel(Q2) Electrical Characteristics TA = 25 C unless otherwise noted Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.