CEM3252L CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CEM3252L
FEATURES
30V, 8A, RDS(ON) = 29mW @VGS = 10V. RDS(ON) = 36mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.5 7.3 ±12 V W A A V SO-8 Lead free product is acquired. D D D D S S S G 1 2 3 4 8 7 6 5 http://www.cet-mos.com Rev 2. 2007.Aug. Details are subject to change without notice . RDS(ON) = 55mW @VGS = 2.5V. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W50RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2924 0.7 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 30V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS =10V, ID = 7.3A VGS = 4.5V, ID = 6A VGS = 0V, IS = 1A 615 130 9.2 2.5 2.4 12.2 7.3 3628 mW pF pF pF ns ns ns ns nC nC nC A V 1.4 VDD = 15V, ID = 5.5A, VGS = 10V, RGEN = 3W VDS = 15V, ID =5.8A, VGS = 4.5V VDS = 15V, VGS = 0V, f = 1.0 MHz VGS = 2.5V, ID = 5A 5540 mW Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.