CEM3139 CET-MOS | Alldatasheet
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Technical content
Details are subject to change without notice . 20V, 9A, RDS(ON) = 16mW @VGS = 4.5V. Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.0 ±12 V W A A V SO-8 P-Channel -30 -24 ±12 CEM3139 http://www.cet-mos.com Rev 2. 2014.Feb. -30V, -6A, RDS(ON) = 34mW @VGS = -10V. RDS(ON) = 52mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 20mW @VGS = 2.5V. D1 D1 D2 D2 S1 G1 S2 G2 1 2 3 4 8 7 6 5 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RqJA
Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.4 -100 100 V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 6.4A VGS = 0V, IS = 1A 980 205 165 1612 mW pF pF pF ns ns ns ns nC nC nC A V VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6W VDS = 10V, ID =6A, VGS = 4.5V VDS = 8V, VGS = 0V, f = 1.0 MHz VGS = 2.5V, ID = 4.5A 2015 mW N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
P-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF -100 100 V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Typ Max -30 VDS = -30V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -6A 34 mW pF pF pF ns ns ns ns nC nC nC A V VGS = -4.5V, ID = -5A mW 52 Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6W VDS = -15V, ID = -5.3A, VGS = -10V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1A 1015 210 140 2.2 5.2 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. Dynamic Characteristics d