CEM3109 CET-MOS | Alldatasheet
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30V, 10A, RDS(ON) = 14mW @VGS = 10V. RDS(ON) = 20mW @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Channel 1 Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@TA = 25 C Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.0 ±20 V W A A V SO-8 D1 D1 D2 D2 S1 G1 S2 G2 8 7 6 5 1 2 3 4 Lead-free plating ; RoHS compliant. http://www.cet-mos.com Channel 2 ±20 -30V, -8A, RDS(ON) = 20mW @VGS = -10V. RDS(ON) = 30mW @VGS = -4.5V. Rev 1. 2011.Sep Details are subject to change without notice . Dual Enhancement Mode Field Effect Transistor (N and P Channel) -30 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RqJA
N-Channel(Q1) Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 1411 1 3 -100 100 mΩ V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 9A VGS = 4.5V, ID = 5A VDD = 15V, ID = 1A, VGS = 10V, RGEN = 4Ω VDS = 24V, ID = 9A, VGS = 4.5V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 1.5A 905 170 125 12.2 2.4 7.2 1.5 1.2 2018 mΩ pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2015 -1 -3 -100 100 mΩ V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -8A VGS = -4.5V, ID = -4A VDD = -15V, ID = -1A, VGS = -10V, RGEN = 4Ω VDS = -24V, ID = -8A, VGS = -4.5V VDS = -25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1.5A 1770 255 180 18.9 5.1 9.4 -1.5 -1.2 3022 mΩ pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. P-Channel Electrical Characteristics TA = 25 C unless otherwise noted