CEM2939 CET-MOS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 7

Technical content

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

20V, 6.5A, RDS(ON) = 30mW @VGS = 4.5V. RDS(ON) = 43mW @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.0 6.5 ±12 V W A A V SO-8 P-Channel -20 -20 -4.8 ±12 D1 D1 D2 D2 S1 G1 S2 G2 1 2 3 4 8 7 6 5 -20V, -4.8A, RDS(ON) = 55mW @VGS = -4.5V. RDS(ON) = 90mW @VGS = -2.5V. CEM2939 Lead-free plating ; RoHS compliant. http://www.cet-mos.com Rev 4. 2013.Jan Specification and data are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RqJA

N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 3025 0.55 1.5 -100 100 mW V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 16V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 6.5A VGS = 2.5V, ID = 5.4A VDS = 5V, ID = 6.5A VDD = 15V, ID = 1A, VGS = 4.5V, RGEN =6W VDS = 10V, ID =6.5A, VGS = 4.5V VDS = 8V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 1.3A 910 230 163 1.4 3.2 6.5 1.2 4335 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. CEM2939

P-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 5543 -0.4 -1 -100 100 mW V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -20 VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = -250µA VGS = -4.5V, ID = -3.2A VGS = -2.5V, ID = -1.0A VDS = -5V, ID = -5.5A VDD = -10V, ID = -4A, VGS = -4.5V, RGEN = 3W VDS = -10V, ID = -4A, VGS = -4.5V VDS = -10V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -2.0A 1155 205 120 13.4 8.4 73.4 34.4 26.8 16.8 146.8 68.8 9.8 1.2 2.7 -4.8 -1.2 9064 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.