CEM23189 CET-MOS | Alldatasheet

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Technical content

20V, 8A, RDS(ON) = 20mW @VGS = 4.5V. Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES

ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 2.0 8.0 ±12 V W A A V SO-8 P-Channel -30 -28 -7.0 ±20 CEM23189 http://www.cet-mos.com Rev 2. 2014.July -30V, -7A, RDS(ON) = 26mW @VGS = -10V. RDS(ON) = 40mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 26mW @VGS = 2.5V. D1 D1 D2 D2 S1 G1 S2 G2 1 2 3 4 8 7 6 5 S1 S2 Details are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W62.5RqJA

Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.4 -100 100 V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 6A VGS = 0V, IS = 1A 560 130 105 1.5 2015.5 mW pF pF pF ns ns ns ns nC nC nC A V VDD = 16V, ID = 2A, VGS = 4.5V, RGEN = 6W VDS = 16V, ID =2A, VGS = 4.5V VDS = 8V, VGS = 0V, f = 1.0 MHz VGS = 2.5V, ID = 5A 2620 mW N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 5 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.

P-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF -100 100 V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Typ Max -30 VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -7A 26 mW pF pF pF ns ns ns ns nC nC nC A V VGS = -4.5V, ID = -5A mW 40 Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD VDD = -24V, ID = -2A, VGS = -4.5V, RGEN = 3W VDS = -24V, ID = -2A, VGS = -4.5V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1A 1180 220 150 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. Dynamic Characteristics d