CEM1010 CET-MOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
Single N-Channel Enhancement Mode Field Effect Transistor CEM1010
FEATURES
100V, 9.5A, RDS(ON) = 15.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS PD IDM 100 2.5 9.5 ±20 V W A A V http://www.cet-mos.com Rev 2. 2012.Feb. Details are subject to change without notice . D D D D S S S G 1 2 3 4 8 7 6 5 SO-8 RoHS compliant. ID 6 A 17 A TA=25 C TA=100 C T=1 sec e T=0.1 sec e 25 A Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W50RqJA
Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 15.512.5 2 4 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 100 VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 4A VDD = 50V, ID = 5A, VGS = 10V, RGEN = 6W VDS = 50V, ID = 5A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 2A 2905 275 160 1.2 pF pF pF ns ns ns ns nC nC nC A V Electrical Characteristics TA = 25 C unless otherwise noted Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Refer to Figure8.