CEL29100 CET-MOS | Alldatasheet

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Technical content

N-Channel Enhancement Mode Field Effect Transistor CEL29100

FEATURES

100V, 296A, RDS(ON) typ = 1.6mW @VGS = 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TOLL package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ TC = 25 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 100 2.2 333 1184 296 ±20 V W A A V W/ C S 1 G D RoHS compliant. http://www.cetsemi.com

209 A @ TC = 100 C

Applications 2 3 4 5 6 7 8 9 10 11 4 5 Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS IAS 60 720 A mJ Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 0.45RqJC RqJA Rev 1. 2020.Dec Details are subject to change without notice . 678

Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 1.91.6 2 4 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 100 VDS = 100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 20A VDD = 50V, ID = 20A, VGS =10V, RGEN = 10W VDS = 50V, ID = 20A, VGS = 10V VDS = 50V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 20A 4570 1250 167 122 155 29.5 277 1.2 pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.L = 0.4mH, IAS = 60A, VDD = 50V, RG = 25W, Starting TJ = 25 C

Figure 12. Normalized Thermal Transient Impedance Curve

c L 2.40 REF. 0.80 1.20 2.80 13.30 8.10 10.20 K R 3xb3 i j H D4 L1b1 e E 8Xb 2xD2 Detail ‘Z’ Detail ‘Z’ Land Pattern (Only For Reference) NOTE : 1.REFER TO JEDEC MO-299B. 2.ALL DIMENSIONS ARE IN mm, ANGLES DEGREES. 3.DIMENSIONS DO NOT INCLUSIVE BURRS AND MOLD FLASH. 4.”*” IS FOR REFERENCE. TOLL 產品外觀尺寸圖(Product Outline Dimension)

MILLIMETERS INCHES SYMBOLS MIN MAX MIN MAX A 2.200 2.400 0.087 0.094 A1 1.700 1.900 0.067 0.075 b 0.700 0.900 0.028 0.035 b1 9.700 9.900 0.382 0.390 b3 1.100 1.300 0.043 0.051 c 0.400 0.600 0.016 0.024 D 10.280 10.480 0.405 0.413 D1 10.980 11.180 0.432 0.440 D2 3.200 3.400 0.126 0.134 D4 4.450 4.650 0.175 0.183 E 9.800 10.000 0.386 0.394 E1 8.000 8.200 0.315 0.323 E2 0.600 0.800 0.024 0.031 e 1.20BSC 0.047BSC H 11.580 11.780 0.456 0.464 H1 6.95BSC 0.274BSC H2 5.89BSC 0.232BSC i 0.10REF 0.004REF j 0.46REF 0.018REF K 2.80REF 0.110REF L 1.400 2.100 0.055 0.083 L1 0.600 0.800 0.024 0.031 L2 0.500 0.700 0.020 0.028 L3 0.300 0.800 0.012 0.031 N 8.000 0.315 Q 8.00REF 0.315REF R 3.000 3.200 0.118 0.126 θ 10°REF 10°REF CEL29100