CEK01N7 CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CEK01N7
FEATURES
700V, 0.3A, RDS(ON) = 18 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TO-92(Bulk) & TO-92(Ammopack) package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 700 3.1 1.2 0.3 ±30 V W A A V Lead free product is acquired. http://www.cet-mos.com G D S Details are subject to change without notice . S G D TO-92(Bulk) S G D TO-92(Ammopack) Rev 1. 2010.June. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Leadb Parameter Symbol Limit Units C/W40RqJL
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2 4 -100 100 V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 700 VDS = 700V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 0.2A VDD = 300V, ID = 0.3A, VGS = 10V, RGEN = 4.7W VDS = 480V, ID = 0.3A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 0.2A 170 124 0.6 7.5 12.8 0.3 1.6 pF pF pF ns ns ns ns nC nC nC A V W 14.5 Forward Transconductance SgFS b VDS = 20V, ID = 0.3A 0.5 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.