CEK01N6G CET-MOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
N-Channel Enhancement Mode Field Effect Transistor CEK01N6G
FEATURES
600V, 1A, RDS(ON) = 9.3 W @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TO-92(Bulk) & TO-92(Ammopack) package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed b Maximum Power Dissipation VDS VGS ID a PD IDM 600 3.1 1.6 0.4 ±30 V W A A V Lead free product is acquired. http://www.cet-mos.com S G D TO-92(Bulk) S G D TO-92(Ammopack) Rev 1. 2009.Nov. Details are subject to change without notice . S G D Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Lead Parameter Symbol Limit Units C/W40RqJL
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 9.3 2 4 -100 100 V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 600 VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 0.4A VDD = 300V, ID = 0.5A, VGS = 10V, RGEN = 10W VDS = 480V, ID = 1A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 0.4A 210 0.7 3.5 0.4 1.5 pF pF pF ns ns ns ns nC nC nC A V W 7.3 Forward Transconductance SgFS b VDS = 15V, ID = 0.4A 10 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.