CEG2108E CET-MOS | Alldatasheet
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Technical content
Dual N-Channel Enhancement Mode Field Effect Transistor CEG2108E
FEATURES
20V, 8.5A, RDS(ON) = 14mW @VGS = 10V. RDS(ON) = 15mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. TSSOP-8 for Surface Mount Package. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 1.5 8.5 ±12 V W A A V RoHS compliant. http://www.cet-mos.com TSSOP-8 D G1 D Rev 2. 2012.Dec D 1 D S 2 S 2 G 2 S 1 S 1 G 1 D D S1 S2 *1K *1K *Typical value by design RDS(ON) = 20mW @VGS = 2.5V. RDS(ON) = 28mW @VGS = 1.8V. Details are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W83RqJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.4 1.0 -10 mW V uA uA µA V Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 8A VDD = 10V, ID = 1A, VGS = 10V, RGEN = 3W VDS = 10V, ID =8A, VGS = 4.5V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 1A 185 487 800 1728 6180 4.3 1.1 2.5 1.2 pF pF pF us us us us nC nC nC A V mW VGS = 4.5V, ID = 4A 12 mW VGS = 2.5V, ID = 2A 14 mW VGS = 1.8V, ID = 1A 20 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 board,t < 10sec. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.