CEP630N CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 200 0.63 ±20 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP630N CEF630N 200V 200V 0.36W 0.36W 9A d 10V 10V TO-220/263 TO-220F 0.27 36 d 9 d CEP630N/CEB630N CEF630N CEB630N Lead free product is acquired. 200V 0.36W 9A 10V http://www.cet-mos.comDetails are subject to change without notice . Rev 3. 2008.Oct. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1.6RqJC RqJA 3.7
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.360.30 2 4 -100 100 W V nA nA µA V S Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Typ Max 200 VDS = 160V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 5A VDS = 10V, ID = 5A VDD = 100V, ID = 5A, VGS = 10V, RGEN = 50W VDS = 160V, ID = 5.9A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz 930 130 116 1.5 pF pF pF ns ns ns ns nC nC nC A V 232 24.7 CEP630N/CEB630N CEF630N IS f VSD Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 5.9A . g.Full package VSD test condition IS = 5.9A . VGS = 0V, IS = 9A g