CEP45N20 CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 200 125 172 ± 20 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP45N20 CEF45N20 200V 200V 32mW 32mW 43A 43A d 10V 10V TO-220/263 TO-220F 0.32 172 d 43 d CEP45N20/CEB45N20 CEF45N20 CEB45N20 200V 32mW 43A 10V http://www.cet-mos.com Rev 1. 2023.Feb Details are subject to change without notice . Drain Current-Continuous @ TC = 25 C @ TC = 100 C A27 27 d Single Pulsed Avalanche Energy g Single Pulsed Avalanche Current g EAS IAS 30 180 A mJ Pb-free lead plating ; RoHS compliant. Halogen Free. Synchronous rectification . DC/DC converter. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1RqJC RqJA 3.1
Applications
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 3227 2 4 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS f VSD Typ Max 200 VDS = 200V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 10A VDD = 100V, ID = 10A, VGS =10V, RGEN = 10W VDS = 100V, ID = 10A, VGS = 10V VDS = 100V, VGS=0V, f = 1.0 MHz VGS = 0V, IS = 10A 1470 170 1.2 pF pF pF ns ns ns ns nC nC nC A V CEP45N20/CEB45N20 CEF45N20 Gate input resistance Rg f=1MHz,open Drain 4.5 W IF = 10A, dIF /dt = 100A/us 305 ns nC Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 33A . g.L = 0.4mH, IAS = 30A, VDD = 50V, RG = 25W, Starting TJ = 25 C. Reverse Recovery Time Trr Reverse Recovery Charge Qrr
Figure 12. Normalized Thermal Transient Impedance Curve