CEP35P10 CET-MOS | Alldatasheet
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Technical content
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-100V, -32A, RDS(ON) =76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM -100 0.83 125 -128 -32 ±20 V W A A V W/ C S G D G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 RDS(ON) =92mW @VGS = -4.5V. CEP35P10/CEB35P10 CEF35P10 Lead-free plating ; RoHS compliant. http://www.cet-mos.com Rev 1. 2009.July Specification and data are subject to change without notice . Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e EAS IAS 450 mJ A Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1.2RqJC RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 7663 -1 -3 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -100 VDS = -100V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -16A VGS = -4.5V, ID = -8A VDD = -50V, ID = -18A, VGS = -10V, RGEN= 3.3W VDS = -80V, ID = -18A, VGS = -10V VDS = -25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -16A 2590 320 -32 -1.2 9272 mW pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.L = 1mH, IAS =30A, VDD = 25V, RG = 25W, Starting TJ = 25 C.