CEP200N15 CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 150 2.85 357 768 192 ± 20 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP200N15 CEF200N15 150V 150V 4.6mW 4.6mW 192A 192A d 10V 10V TO-220/263 TO-220F 0.71 768 d 192 d CEP200N15/CEB200N15 CEF200N15 CEB200N15 RoHS compliant. 150V 4.6mW 192A 10V http://www.cet-mos.com Rev 1. 2019.Oct Details are subject to change without notice . Drain Current-Continuous @ TC = 25 C @ TC = 100 C A122 122 d Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.35RqJC RqJA 1.4 Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h EAS IAS 720 mJ A
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 4.63.8 2 4 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Typ Max 150 VDS = 150V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 20A VDD = 75V, ID =20A, VGS = 10V, RGEN = 10W VDS = 75V, ID = 20A, VGS = 10V VDS = 75V, VGS = 0V, f = 1.0 MHz 3190 730 192 1.5 pF pF pF ns ns ns ns nC nC nC A V IS f VGS = 0V, IS = 20A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 96A . g.Full package VSD test condition IS = 96A . h.L = 0.4mH, IAS = 60A, VDD = 50V, RG = 25W, Starting TJ = 25 C. CEP200N15/CEB200N15 CEF200N15
Figure 12. Normalized Thermal Transient Impedance Curve