CEP18N5A CET-MOS | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS PD IDM e 500 1.6 208 ±30 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP18N5A CEF18N5A 500V 500V 0.27W 0.27W 18A 18A d 10V 10V 0.5 72 d 11 d CEB18N5A 500V 18A 10V TO-220/263 TO-220F http://www.cet-mos.com Details are subject to change without notice . Rev 1. 2022.Apr. 0.27W Drain Current-Continuous ID A @ TC = 100 C @ TC = 25 C 18 18 d RoHS compliant. Single Pulsed Avalanche Energy e Single Pulsed Avalanche Current e EAS IAS 859 mJ A Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.6RqJC RqJA 1.9
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.270.24 2 4 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS f VSD g Typ Max 500 VDS =500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 9A VDD = 250V, ID =18A, VGS = 10V, RGEN = 25W VDS = 400V,ID = 18A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 18A 2465 300 1.4 pF pF pF ns ns ns ns nC nC nC A V CEP18N5A/CEB18N5A CEF18N5A e.L = 5.3mH, IAS =18A, VDD = 50V, RG = 25W, Starting TJ = 25 C IF = 18A, di /dt = 100A/us Gate input resistance Rg f=1MHz,open Drain 0.9 W Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) =10A . g.Full package VSD test condition IS =10A . Reverse Recovery Time Reverse Recovery Charge Trr Qrr 370 4.5 ns uC
Figure 12. Normalized Thermal Transient Impedance Curve