CEP13N5B CET-MOS | Alldatasheet
Document overview
- PDF pages: 5
Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 500 1.66 208 13.5 ±30 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP13N5B CEF13N5B 500V 500V 0.46W 0.46W 13.5A 13.5A d 10V 10V 0.42 54 d 13.5 d CEB13N5B 500V 0.46W 13.5A 10V RoHS compliant. TO-220/263 TO-220F http://www.cet-mos.com Rev 2. 2022.July Drain Current-Continuous @ TC = 25 C @ TC = 100 C A8.5 8.5 d Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.6RqJC RqJA 2.4 Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h EAS IAS 542 8.5 mJ A Details are subject to change without notice .
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.460.39 2 4 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Typ Max 500 VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 6.5A VDD = 250V, ID =13A, VGS = 10V, RGEN = 25W VDS = 400V,ID = 13A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz 1600 215 102 13.5 1.4 pF pF pF ns ns ns ns nC nC nC A V IS f VGS = 0V, IS = 13.5A g Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 6.7A . g.Full package VSD test condition IS = 6.7A . h.L = 15mH, IAS = 8.5A, VDD = 50V, RG = 25W, Starting TJ = 25 C. CEP13N5B/CEB13N5B CEF13N5B
Figure 12. Normalized Thermal Transient Impedance Curve