CEP10N6 CET-MOS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 600 1.3 166 ±30 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP10N6 CEF10N6 600V 600V 0.75W 0.75W 10A 10A d 10V 10V 0.4 40 d 10d CEB10N6 600V 0.75W 10A 10V Lead free product is acquired. TO-220/263 TO-220F http://www.cet-mos.com Details are subject to change without notice . Rev 2. 2011.Feb Drain Current-Continuous @ TC = 25 C @ TC = 100 C A6 6d Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.75RqJC RqJA 2.5 Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h EAS IAS 187.5 mJ A
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.750.65 2 4 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Typ Max 600 VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 5A VDD = 300V, ID =10A, VGS = 10V, RGEN = 25W VDS = 480V, ID = 10A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz 1760 220 32.5 150 7.7 1.4 pF pF pF ns ns ns ns nC nC nC A V IS f VGS = 0V, IS = 10A g VDS = 480V, Tc = 125 C 10 µA Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 6A . g.Full package VSD test condition IS = 6A . h.L = 15mH, IAS = 5A, VDD = 50V, RG = 25W, Starting TJ = 25 C CEP10N6/CEB10N6 CEF10N6