CEP04N6 CET-MOS | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 600 0.83 104 16.8 2.6 ±30 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP04N6 CEF04N6 600V 600V 2.4W 2.4W 4.2A 4.2A d 10V 10V TO-220/263 TO-220F 0.28 16.8 d 2.6 d CEP04N6/CEB04N6 CEF04N6 CEB04N6 RoHS compliant. 600V 2.4W 4.2A 10V http://www.cet-mos.com Rev 2. 2013.Jan Drain Current-Continuous @ TC = 25 C @ TC = 100C 4.2 4.2 d A Single Pulsed Avalanche Energy g Single Pulsed Avalanche Current g EAS IAS 242 4.4 mJ A Details are subject to change without notice . Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 1.2RqJC RqJA 3.6
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2.42 2 4 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Typ Max 600 VDS = 600V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 2.1A VDD = 300V, ID = 3.4A, VGS = 10V, RGEN = 25W VDS = 480V, ID = 3.4A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz 580 4.2 1.2 pF pF pF ns ns ns ns nC nC nC A V IS f VSD Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 2.4A . VGS = 0V, IS = 4.2A g.L = 25mH, IAS =4.4A, VDD = 50V, RG = 25W, Starting TJ = 25 C. CEP04N6/CEB04N6 CEF04N6