CEU16N10SL CET-MOS | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor CED16N10SL/CEU16N10SL
FEATURES
100V, 12A, RDS(ON) = 120mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. CEU SERIES TO-252(D-PAK) CED SERIES TO-251(I-PAK) G G S S D D RoHS compliant. http://www.cet-mos.com S G D RDS(ON) = 165mW @VGS = 3V. Details are subject to change without notice . RDS(ON) = 130mW @VGS = 5V. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 100 0.28 ±16 V W A A V W/ C Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 3.5RqJC RqJA Rev 3. 2020.Feb Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS IAS mJ A 8 A
Figure 12. Normalized Thermal Transient Impedance Curve