CECF75N55S CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CECF75N55S
FEATURES
550V, 75A, RDS(ON) = 50mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. SOT-227 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM 550 5.2 657 300 ±30 V W A A V W/ C S G D SOT-227 RoHS compliant. http://www.cet-mos.com Drain Current-Continuous @ TC = 100 C @ TC = 25 C 33 A D S G S Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Heatsink Parameter Symbol Limit Units C/W C/W 0.05 0.19RqJC RqCS Rev 1. 2020.April Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d EAS IAS 992 mJ A Details are subject to change without notice .
Electrical Characteristics Tc = 25 C unless otherwise noted CECF75N55S Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 5040 2.5 4.5 -100 100 mW V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max 550 VDS = 550V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 30A VDD = 400V, ID = 30A, VGS = 10V, RGEN = 10W VDS = 480V, ID = 30A, VGS = 10V VDS = 25V, VGS = 0V, f = 1MHz VGS = 0V, IS = 20A 1.5 pF pF pF ns ns ns ns nC nC nC A V 4677 2556 11.5 180 34.5 d.L = 31mH, IAS =8A, VDD = 60V, RG = 25W, Starting TJ = 25 C. Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.
Figure 12. Normalized Thermal Transient Impedance Curve
O P R Q S E B C D F G H K A 4 x M 4 NUTS I JMN SOT -227 (Product Outline Dimension) M I L L I M E T E R S I NC H E S SY M B OL S M I N M A X M I N M A X A 31.50 32.10 1.24 1.264 B 7.70 8.30 0.303 0.327 C 4.10 4.30 0.161 0.169 D 4.10 4.30 0.161 0.169 E 4.10 4.30 0.161 0.169 F 14.90 15.15 0.587 0.596 G 29.80 30.50 1.173 1.201 H 37.80 38.30 1.488 1.508 I 11.70 12.20 0.461 0.480 J 0.75 0.85 0.030 0.033 K 12.50 13.00 0.492 0.512 M 25.00 25.50 0.984 1.004 N 6.70 7.05 0.264 0.278 O 4.10 4.50 0.161 0.177 P 1.90 2.10 0.075 0.083 Q 3.20 3.60 0.126 0.142 R 26.60 27.00 1.047 1.063 S -0.03 0.10 -0.001 0.004