CEC8218 CET-MOS | Alldatasheet
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Technical content
Dual N-Channel Enhancement Mode Field Effect Transistor CEC8218
FEATURES
20V, 7A, RDS(ON) = 20mW @VGS = 4.5V. RDS(ON) = 28mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation VDS VGS ID PD IDM 1.5 ±12 V W A A V Lead free product is acquired. http://www.cet-mos.com Rev 3. 2015.Mar Details are subject to change without notice . D D S1 S2 *1K *1K *Typical value by design 5 6 7 8 4 2 13 DD DDD S1S2G1 Bottom View DFN3*3 G2 RDS(ON) = 48mW @VGS = 1.8V. Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Ambient b Parameter Symbol Limit Units C/W83RqJA
Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2016 0.5 -10 mW V µA µA µA V S Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) gFS Typ Max VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID = 5A VGS = 2.5V, ID = 4A VDS = 10V, ID = 5A 17 2821 mW 1.2 VGS = 1.8V, ID = 2A 4835 mW Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VDD = 10V, ID = 1A, VGS = 4.5V, RGEN = 6W VDS = 10V, ID = 5A, VGS = 4.5V VGS = 0V, IS = 1.5A 0.34 0.86 3.60 0.68 1.72 7.5 4.2 1.2 2.5 5.6 6.5 1.2 µs µs µs µs nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.