CEC2088E CET-MOS | Alldatasheet
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Technical content
N-Channel Enhancement Mode Field Effect Transistor CEC2088E
FEATURES
20V, 36A, RDS(ON) = 9mW @VGS = 4.5V. RDS(ON) = 12mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Maximum Power Dissipation VDS VGS ID@RqJc PD IDM@RqJA 17.8 V W A A V RoHS compliant. http://www.cet-mos.com Rev 2. 2015.Sep Details are subject to change without notice . ID@RqJA 14 A Drain Current-Pulsed a IDM@RqJc 144 A D D S1 S2 *Typical value by design RDS(ON) = 16mW @VGS = 1.8V. ESD Protected: 2000 V. DFN3*3 Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case b Parameter Symbol Limit Units C/W7RqJc Thermal Resistance, Junction-to-Ambient b C/W50RqJA
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 0.35 1 -10 mW V µA µA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS = -8V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.5V, ID =3A VDD = 16V, ID = 6A, VGS= 4.5V, RGEN= 6W VDS = 16V, ID = 12A, VGS = 4.5V VDS = 10V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = 14A 2495 275 220 1.2 pF pF pF ns ns ns ns nC nC nC A V mW VGS = 1.8V, ID =3A 11 mW 12VGS = 2.5V, ID =3A 9 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing.