CEP1185 CET-MOS | Alldatasheet
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N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM e 800 1.1 139 17.6 2.8 ±30 V W A A V W/ C S G D G S D CEB SERIES TO-263(DD-PAK) S D G CEP SERIES TO-220 CEF SERIES TO-220F S D G Type VDSS RDS(ON) ID @VGS CEP1185 CEF1185 800V 800V 2.9 W 2.9 W 4.4A 4.4A d 10V 10V TO-220/263 TO-220F 0.4 17.6 d CEP1185/CEB1185 CEF1185 CEB1185 800V 2.9 W 4.4A 10V http://www.cet-mos.com Rev 1. 2014.May Drain Current-Continuous @ TC = 25 C @ TC = 100 C 4.4 A Single Pulsed Avalanche Energy h Single Pulsed Avalanche Current h EAS IAS 331 4.7 mJ A 4.4 d This is preliminary information on a new product in development now . Details are subject to change without notice . 2.8 d Operating and Store Temperature Range TJ,Tstg -55 to 150 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 0.9RqJC RqJA 2.8 62.5 Lead-free plating ; RoHS compliant. PRELIMINARY
Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 2.92.4 2 4 -100 100 W V nA nA µA V Gate Body Leakage Current, Reverse On Characteristics b Dynamic Characteristics c Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics c Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage b Test Condition VGS = 0V, ID = 250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Typ Max 800 VDS = 800V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VGS = VDS, ID = 250µA VGS = 10V, ID = 2.2A VDD = 400V, ID = 4.8A, VGS = 10V, RGEN = 25W VDS = 640V, ID = 4.8A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0 MHz 1285 105 4.4 1.2 pF pF pF ns ns ns ns nC nC nC A V CEP1185/CEB1185 CEF1185 IS VSD Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . h.L = 30mH, IAS =4.7A, VDD = 50V, RG = 25W, Starting TJ = 25 C VGS = 0V, IS = 4.4A