CD4148WSP HOTTECH | Alldatasheet
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Page:P2-P1 C hip Diodes GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Switching Diode FE A TURES
- Silicon epitaxial planar diode
- SMD chip pattern, available in various dimension included 1206 & 0603
- Leadfree and RoHS compliance components
- For small signal switching and operating ambient temperature less than 55oC and voltage withstand less than 60V; not suitable for AC switching input as rectified circuit and high reverse voltage location MECH A NIC AL CHARA C TERISTICS
- Size:0805
- Weight: approx.6mg
- Marking: Cathode terminal THERM A L C HARACTERISTIC S1) Parameter atTamb =25oC 1) Symbol V alue Unit Forward Power Dissipation Power derating above 25oC Ptot 200 mW 1.6 mW/ oC JunctionTemperature Tj 150 oC Thermal Resistance Junction to Ambient air R θJA 375 oC/W Operating&Storage Temperature range Tstg -55 to 150 oC MAXIMUM RATIN G 1) Parameter atTamb =25oC 1) Symbol V alue Unit Repetitive Peak Reverse Voltage V RRM 75 V Average rectified current sinhalf wave rectification w i t h resistive load IF(AV) 150 mA Repetitive PeakForward Current at Tamb =25°C IFRM 300 mA N on-RepetitiveSurge Forward Current at t<1s and Tj=25oC at t 8.3ms and Tj=25oC IFSM 500 mA 1000 mA ELECTRIC A L CHARAC TERISTICS 1) Parameter atTamb =25oC 1) Symbol V alue Unit Forward Voltage atIF=10mA atIF=100mA V F 1.0MAX V 1.25MAX V Leakage C urrent atV R =20V Leakage C urrent atV R =75V IR 0.025MAX uA
5 MAX uA
Capacitance atV R =0V, f=1M H z C tot 4 MAX pF Reverse Recovery Time at IF =IR =10mA,R L=100Ω trr 4 MAX ns 1) Valid provided that electrodes are kept at ambient temperature. 0805 L 2.0±0.2mm W 1.25±0.2mm T 0.85±0.1mm C 0.45±0.2mm CD4148 W SP
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Figure 3. Forward Current De-r a t i n g Figure 4. Reverse Voltage De-rating