CD4148WP HOTTECH | Alldatasheet
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Page:P2-P1 Chip Diodes GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Switching Diode FE A TURES
- Silicon epitaxial planar diode
- SMD chip pattern, available in various dimension included0805 & 0603
- Leadfree and RoHS compliance components
- For small signal switching and operating ambient temperature less than 55oC and voltage withstand less than 60V; not suitable for AC switching input as rectified circuit and high reverse voltage location MECH A NIC AL CHARA C TERISTICS
- Size:1206
- Weight: approx.10mg
- Marking: Cathode terminal THERM A L C HARACTERISTIC S1) Parameter atTamb =25oC 1) Symbol V alue Unit Forward Power Dissipation Power derating above 25oC Ptot 400 mW 3.2 mW/ oC JunctionTemperature Tj 150 oC Thermal Resistance Junction toAmbient air R θJA 375 oC/W Operating&Storage Temperature range Tstg -55 to 150 oC MAXIMUM RATIN G 1) Parameter atTamb =25oC 1) Symbol V alue Unit RepetitivePeak Reverse Voltage V RRM 75 V Average rectified current sinhalf wave rectification w i t h resistive load IF(AV) 150 mA Repetitive PeakForward Current at Tamb =25°C IFRM 300 mA N on-RepetitiveSurge Forward Current at t<1s and Tj=25oC at t 8.3ms and T j =25oC IFSM 500 mA 1000 mA ELECTRIC A L CHARAC TERISTICS 1) Parameter atTamb =25oC 1) Symbol V alue Unit Forward Voltage atIF=10mA atIF=100mA V F 1.0MAX V 1.25MAX V Leakage C urrent atV R =20V Leakage C urrent atV R =75V IR 0.025MAX uA
5 MAX uA
V R =0V, f=1M H z C tot MAX pF Reverse Recovery Time at IF =IR =10mA,R L=100Ω trr 4 MAX ns 1) Valid provided that electrodes are kept at ambient temperature. 1206 L 3.2±0.2mm W 1.5±0.2mm T 0.85±0.1mm C 0.55±0.2mm CD4148 W P
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Figure 3. Forward Current De-r a t i n g Figure 4. Reverse Voltage De-rating