CD2315 ASI | Alldatasheet

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A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice. CHARACTERISTICS TC = 25 °C SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 35 V BVCER IC = 50 mA R BE = 10 Ω 60 V BVEBO IE = 10 mA 4.0 V ICES VE = 28 V 5 mA hFE VCE = 5.0 V IC = 1.0 A 10 100 --- Cob VCB = 28 V f = 1.0 MHz 80 pF GPE IMD3 VCE = 25 V I CQ = 3.2 A f = 225 MHz PREF = 16 W Vision = -8 dB Snd. = -7 dB Side Band = -16 dB 13.5 14.5 -55 dB dBc NPN SILICON RF POWER TRANSISTOR CD2315 DESCRIPTION: The ASI CD2315 is designed for broadband amplifier applications in commercial and amateur communication equipment. FEATURES:

  • PG = 18 dB min. at 75 W/30 MHz
  • IMD3 = -30 dBc max. at 75 W (PEP)
  • Omnigold™ Metalization System MAXIMUM RATINGS IC 10 A VCB 60 V VCE 35 V PDISS 140 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θθθθJC 1.05 °C/W PACKAGE STYLE .380 4L FLG 1 = Collector 2 = Emitter 3 = Base MINIMUM inches / mm .970 / 24.64 B C D E F G A MAXIMUM .385 / 9.78 .980 / 24.89 inches / mm H .160 / 4.06 .180 / 4.57 DIM I J .240 / 6.10 .255 / 6.48 .785 / 19.94 F B G .125 Ø.125 NOM. FULL R D E C H .112 x 45° A I J .280 / 7.11 .720 / 18.29 .730 / 18.54 2 1