CAS480M12HM3 WOLFSPEED | Alldatasheet

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Technical content

Copyright ©2022 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 2, 2022-02-25 CAS480M12HM3 4600 Silicon Dr., Durham, NC 27703 CAS480M12HM3

1200 V, 480 A, Silicon Carbide

High-Performance, Switching Optimized, Half-Bridge Module Technical Features

  • Low Inductance, Low Profile 62mm Footprint
  • High Junction Temperature (175 °C) Operation
  • Implements Switching Optimized Third Generation SiC MOSFET Technology
  • Zero Reverse Recovery from Diodes
  • Light Weight AlSiC Baseplate
  • High Reliability Silicon Nitride Insulator VDS 1200 V IDS 480 A System Benefits
  • Lightweight, Compact Form Factor with 62mm Compatible Baseplate Enables System Retrofit
  • Increased System Efficiency, due to Low Switching & Conduction Losses of SiC
  • High Reliability Material Selection

Applications

  • Railway & Traction
  • Solar
  • EV Chargers
  • Industrial Automation & Testing Package 110mm x 65 mm x 12.2 mm Key Parameters (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VDS max Drain-Source Voltage 1200 VVGS max Gate-Source Voltage, Maximum Value -8 +19 Transient, <100 ns Fig. 33 VGS op Gate-Source Voltage, Recommended Op. Value -4 +15 Static IDS DC Continuous Drain Current 640 A VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C Fig. 20

481 VGS = 15 V, TC = 90 ˚C, TVJ ≤ 175 ˚C

ISD DC Source-Drain Current 640 VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C IF Schottky Diode DC Forward Current 464 VGS = - 4 V, TC = 25 ˚C, TVJ ≤ 175 ˚C IDS (pulsed) Maximum Pulsed Drain-Source Current 960 tPmax limited by TVJ max VGS = 15 V, TC = 25 ˚CIF (pulsed) Maximum Pulsed Diode Current 960 TVJ op Maximum Virtual Junction Temperature under Switching Conditions -40 175 °C Mid NTC1 NTC2 -t° -t°

Copyright ©2022 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 2, 2022-02-25 CAS480M12HM3 4600 Silicon Dr., Durham, NC 27703 MOSFET Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, TVJ = -40 °C VGS(th) Gate Threshold Voltage 1.8 2.5 3.6 VDS = VGS, ID = 160 mA

2.0 VDS = VGS, ID = 160 mA, TVJ = 175 °C

IDSS Zero Gate Voltage Drain Current 10 280 μA VGS = 0 V, VDS = 1200 V IGSS Gate-Source Leakage Current 0.1 2 VGS = 15 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance (Devices Only) 2.29 2.97 mΩ VGS = 15 V, ID = 480 A Fig. 2 Fig. 33.66 VGS = 15 V, ID = 480 A, TVJ = 175 °C gfs Transconductance 356 S VDS = 20 V, IDS = 480 A Fig. 4

345 VDS = 20 V, IDS = 480 A, TVJ = 175 °C

Turn-On Switching Energy, TVJ = 25 °C TVJ = 125 °C TVJ = 175 °C 11.3 9.6 9.9 mJ VDS = 600 V, ID = 500 A, VGS = -4 V/15 V, RG(ext) = 1.0 Ω, L = 13.7 μH Fig. 11 Fig. 13 EOff Turn-Off Switching Energy, TVJ = 25 °C TVJ = 125 °C TVJ = 175 °C 7.2 7.3 7.4 RG(int) Internal Gate Resistance 0.8 Ω VAC = 25 mV, f = 100 kHz Ciss Input Capacitance 43.1 nF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 9Coss Output Capacitance 2.76 Crss Reverse Transfer Capacitance 70.7 pF QGS Gate to Source Charge 448 nC VDS = 800 V, VGS = -4 V/15 V ID = 480 A Per IEC60747-8-4 pg 21 QGD Gate to Drain Charge 539 QG Total Gate Charge 1590 Rth JC FET Thermal Resistance, Junction to Case 0.1 0.115 °C/W Fig. 17 Diode Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VF Diode Forward Voltage 1.95 V VGS = -4 V, IF = 480 A Fig. 7

3.10 VGS = -4 V, IF = 480 A, TVJ = 175 °C

tRR Reverse Recovery Time 28 ns VGS = -4 V, ISD = 500 A, VR = 600 V diF/dt = 17 A/ns, TVJ = 175 °C Fig. 32QRR Reverse Recovery Charge 4.5 μC IRRM Peak Reverse Recovery Current 270 A ERR Diode Energy TVJ = 25 °C TVJ = 125 °C TVJ = 175 °C 1.1 1.3 1.5 mJ VDS = 600 V, ID = 500A, VGS = -4 V/15 V, RG(ext) = 1.0 Ω, L = 13.7 μH Fig. 14 Note 1 Rth JC Diode Thermal Resistance, Junction to Case 0.11 0.13 °C/W Note 1 SiC Schottky diodes do not have reverse recovery energy but still contribute capacitive energy.

Copyright ©2022 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 2, 2022-02-25 CAS480M12HM3 4600 Silicon Dr., Durham, NC 27703 Module Physical Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions μΩ TC = 125 °C, Note 2 LStray Stray Inductance 4.8 nH Between Terminals 1 and 3 TC Case Temperature -40 125 °C W Weight 180 g MS Mounting Torque 3 4.5 5 N-m Baseplate, M6 bolts 0.9 1.1 1.3 Power Terminals, M4 bolts Visol Case Isolation Voltage 4 kV AC, 50 Hz, 1 min CTI Comparative Tracking Index 600 Clearance Distance 13.07 mm Terminal to Terminal

6.00 Terminal to Baseplate

14.27 Terminal to Terminal

12.34 Terminal to Baseplate

Note 2 Total Effective Resistance (Per Switch Position) = MOSFET RDS(on) + Switch Position Package Resistance. Temperature Sensor (NTC) Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions R25 Resistance at 25°C 4700 Ω TNTC = 25 °C Tolerance of R25 ±1 % B25/85 Beta Value for 25°C to 85°C 3435 K B0/100 Beta Value for 0°C to 100°C 3399 K Tolerance of B25/85 ±1 % P25 Maximum Power Dissipation 50 mW A B C D Steinhart & Hart Coefficients for NTC Resistance & NTC Temperature Computation (T in K) A1 B1 C1 D1 3.354E-03 3.001E-04 5.085E-06 2.188E-07

Copyright ©2022 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 2, 2022-02-25 CAS480M12HM3 4600 Silicon Dr., Durham, NC 27703 Schematic and Pin Out Package Dimensions (mm) PIN OUT SCHEME PIN LABEL 1 V+

2 Mid

4 G1, Top row pins (2)

5 K1, Bottom row pins (2)

6 G2, Top row pins (2)

7 K2, Bottom row pins (2)

8 NTC1

9 NTC2

-t° -t° D1 D1 D2 D3 4× 6.6±0.25 4× 12 A XXXXXX-XXXX 9× M4 POWER TERMINAL CONNECTION POINTS DATE CODE PART NUMBER DM CODE 0.30

3 SURFACES

9× 4.25 MAX BOLT PENETRATION DEPTH C8 C10 C10 C8 C8 C9 DETAIL A SCALE: 4:1 3× R0.8 D6 D6 D6 XXXXXXXXXXXX NOTE: ALL MARKINGS SHALL CONFORM TO PRC-00786. DIMENSION TABLE SYMBOL DIMENSION TOLERANCE A1 110.00 0.60 A2 109.25 0.60 A3 65.00 0.60 A4 64.25 0.60 A5 3.25 0.30 A6 11.45 0.60 B1 93.00 0.30 B2 48.00 0.30 C1 11.30 0.40 C2 13.84 0.40 C3 24.00 0.40 C4 34.16 0.40 C5 36.70 0.40 C6 1.71 0.40 C7 17.30 0.50 C8 2.54 0.30 C9 0.64 0.30 C10 10.16 0.40 D1 23.75 0.50 D2 23.13 0.50 D3 24.13 0.50 D4 12.20 0.50 D5 71.00 0.30 D6 10.75 0.30

Copyright ©2022 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 2, 2022-02-25 CAS480M12HM3 4600 Silicon Dr., Durham, NC 27703 Supporting Links & Tools

  • CGD1700HB3P-HM3 Evaluation Gate Driver
  • CGD12HB00D: Differential Transceiver Board
  • CPWR-AN35: Thermal Interface Material Application Note
  • CPWR-AN39: KIT-CRD-CIL12N-HM User Guide
  • KIT-CRD-CIL12N-HM: Dynamic Performance Evaluation Board for the HM2 and HM3 Module
  • CAS480M12HM3 PLECS Models Notes This document and the information contained herein are subject to change without notice. Any such change shall be evidenced by the publication of an updated version of this document by Cree. No communication from any employee or agent of Cree or any third party shall effect an amendment or modification of this document. No responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from use of the information contained herein. No license is granted by implication or otherwise under any patent or patent rights of Cree. Notwithstanding any application-specific information, guidance, assistance, or support that Cree may provide, the buyer of this product is solely responsible for determining the suitability of this product for the buyer’s purposes, including without limitation for use in the applications identified in the next bullet point, and for the compliance of the buyers’ products, including those that incorporate this product, with all applicable legal, regulatory, and safety-related requirements. This product has not been designed or tested for use in, and is not intended for use in, applications in which failure of the product would reasonably be expected to cause death, personal injury, or property damage, including but not limited to equipment implanted into the human body, life-support machines, cardiac defibrillators, and similar emergency medical equipment, aircraft navigation, communication, and control systems, aircraft power and propulsion systems, air traffic control systems, and equipment used in the planning, construction, maintenance, or operation of nuclear facilities. RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future, please contact your Cree representative to ensure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.