CAS300M12BM2 WOLFSPEED | Alldatasheet

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Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 2, 2021-02-08 CAS300M12BM2 4600 Silicon Dr., Durham, NC 27703 CAS300M12BM2

1200 V, 300 A All-Silicon Carbide

High Performance, Switching Optimized, Half-Bridge Module Technical Features

  • Industr y Standard 62mm Footprint Ultr a Low Loss , High-Frequency Operation
  • Z ero Reverse Recovery from Diodes
  • Z ero Turn-off Tail Current from MOSFET
  • Normally-off , Fail-safe Device Operation
  • Copper Baseplat e and Aluminum Nitride Insulator VDS 1200 V IDS 300 A System Benefits
  • 62mm F orm Factor Enables System Retrofit Incr eased System Efficiency, due to Low Switching & Conduction Losses of SiC

Applications

  • Induction He ating
  • Mot or Drives
  • Solar and Wind Invert ers
  • UP S and SMPS
  • T raction Package 61.4 mm X 106.4 mm X 30 mm Maximum Parameters (Verified By Design) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VDS max Drain-Source Voltage 1200 VVGS max Gate-Source Voltage, Maximum Value -10 +25 Transient, <100 ns Fig. 32 VGS op Gate-Source Voltage, Recommended Op. Value -5 +20 Static I DS DC Continuous Drain Current 498 A VGS = 20 V, TC = 25 ˚C, TVJ ≤ 150 ˚C Fig. 20

345 VGS = 20 V, TC = 90 ˚C, TVJ ≤ 150 ˚C

ISD DC Source-Drain Current 876 VGS = 20 V, TC = 25 ˚C, TVJ ≤ 150 ˚C IF Schottky Diode DC Forward Current 547 VGS = - 5 V, TC = 25 ˚C, TVJ ≤ 150 ˚C IDS (pulsed) Maximum Pulsed Drain-Source Current 1500 VGS = 20 V TC = 25 ˚C; tPmax limited by TVJmax IF (pulsed) Maximum Pulsed Diode Current 1500 VGS = -5 V TVJ op Maximum Virtual Junction Temperature under Switching Conditions -40 150 °C

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 2, 2021-02-08 CAS300M12BM2 4600 Silicon Dr., Durham, NC 27703 MOSFET Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, TVJ = -40 °C VGS(th) Gate Threshold Voltage 2.0 2.9 4.0 VDS = VGS, ID = 90 mA

2.4 VDS = VGS, ID = 90 mA, TVJ = 150 °C

IDSS Zero Gate Voltage Drain Current 600 2000 μA VGS = 0 V, VDS = 1200 V IGSS Gate-Source Leakage Current 0.06 3.6 VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance (Devices Only) 4.17 5.67 mΩ VGS = 20 V, ID = 300 A Fig. 2 Fig. 37.20 VGS = 20 V, ID = 300 A, TVJ = 150 °C gfs Transconductance 160 S VDS= 20 V, IDS= 300 A Fig. 4

160 VDS= 20 V, IDS= 300 A, TVJ = 150 °C

Turn-On Switching Energy, TVJ = 25 °C TVJ = 125 °C TVJ = 175 °C 3.4 3.0 2.9 mJ VDS = 600 V, ID = 300 A, VGS = -5 V/+20 V, RG(ext) = 0.0 Ω, L= 22.2 μH Fig. 11 Fig. 13 EOff Turn-Off Switching Energy, TVJ = 25 °C TVJ = 125 °C TVJ = 175 °C 3.4 3.4 3.5 RG(int) Internal Gate Resistance 3.0 Ω VAC = 25 mV, f = 100 kHz Ciss Input Capacitance 19.5 nF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 9Coss Output Capacitance 2.54 Crss Reverse Transfer Capacitance 113 pF QGS Gate to Source Charge 166 nC VDS = 800 V, VGS = -5 V/+20 V ID = 300 A Per IEC60747-8-4 pg 21 QGD Gate to Drain Charge 475 QG Total Gate Charge 1025 Rth JC FET Thermal Resistance, Junction to Case 0.070 0.075 °C/W Fig. 17

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 2, 2021-02-08 CAS300M12BM2 4600 Silicon Dr., Durham, NC 27703 Module Physical Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions mΩ TC = 125 °C, Note 2 LStray Stray Inductance 11.1 nH Between Terminals 3 and 2 TC Case Temperature -40 125 °C W Weight 300 g MS Mounting Torque 4 5 5.5 N-m Baseplate, M6-1.0 bolts 4 5 5.5 Power Terminals, M6-1.0 bolts Visol Case Isolation Voltage 5 kV AC, 50 Hz, 1 min Clearance Distance mm Terminal to Terminal

30 Terminal to Baseplate

30 Terminal to Terminal

40 Terminal to Baseplate

Note 2 Total Effective Resistance (Per Switch Position) = MOSFET RDS(on) + Switch Position Package Resistance. Diode Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VF Diode Forward Voltage 1.6 V VGS = -5 V, IF = 300 A Fig. 7

2.1 VGS = -5 V, IF = 300 A, TVJ = 150 °C

trr Reverse Recovery Time 27 ns VGS = -5 V, ISD = 300 A, VR = 600 V diF/dt = 22 A/ns, TVJ = 150 °C Fig. 31QRR Reverse Recovery Charge 4.9 μC IRRM Peak Reverse Recovery Current -310 A Err Diode Energy TVJ = 25 °C TVJ = 125 °C TVJ = 150 °C 2.04 2.17 2.18 mJ VDS = 600 V, ID = 300A, VGS = -5 V/20 V, RG(ext) = 0.0 Ω, L= 22.2 μH Fig. 14 Note 1 Rth JC Diode Thermal Resistance, Junction to Case 0.073 0.076 °C/W Fig. 18 Note 1 SiC Schottky diodes do not have reverse recovery energy but still contribute capacitive energy.

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 2, 2021-02-08 CAS300M12BM2 4600 Silicon Dr., Durham, NC 27703 Schematic and Pin Out Package Dimensions (mm) CAS300M12BM2 HA1940-A019

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 2, 2021-02-08 CAS300M12BM2 4600 Silicon Dr., Durham, NC 27703 Supporting Links & Tools

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  • KIT -CRD-CIL12N-BM: Dynamic Performance Evaluation Board for the BM2 and BM3 Module Notes
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