CAS120M12BM2

CAS120M12BM2 WOLFSPEED | Alldatasheet

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Technical content

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 1, 2020-11-11 CAS120M12BM2 4600 Silicon Dr., Durham, NC 27703 CAS120M12BM2

1200 V, 120 A All-Silicon Carbide

High Performance, Switching Optimized, Half-Bridge Module Technical Features

• Industry Standard 62mm Footprint
• Ultra-Low Loss, High-Frequency Operation
• Zero Reverse Recovery from Diodes
• Zero Turn-off Tail Current from MOSFET
• Normally-off, Fail-safe Device Operation
• Copper Baseplate and Aluminum Nitride Insulator VDS 1200 V IDS 120 A System Benefits
• Fast Time-to-Market with Minimal Development Required for Transition from 62mm IGBT Packages
• Increased System Efficiency, due to Low Switching & Conduction Losses of SiC

Applications

• Railway & Traction
• Solar & Renewable Energy
• EV Charging
• Industrial Automation & Testing Package 61.4 mm X 106.4 mm X 30 mm Maximum Parameters (Verified by Design) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VDS max Drain-Source Voltage 1200 VVGS max Gate-Source Voltage, Maximum Value -10 +25 Transient, <100 ns Fig. 33 VGS op Gate-Source Voltage, Recommended Op. Value -5 +20 Static IDS DC Continuous Drain-Source Current 200 A VGS = 20 V, TC = 25 ˚C, TVJ ≤ 150 ˚C Fig. 21

144 VGS = 20 V, TC = 90 ˚C, TVJ ≤ 150 ˚C

ISD DC Continuous Source-Drain Current 460 VGS = 20 V, TC = 25 ˚C, TVJ ≤ 150 ˚C IF Schottky Diode DC Forward Current 312 VGS = -5 V, TC = 25 ˚C, TVJ ≤ 150 ˚C IDS (pulsed) Maximum Pulsed Drain-Source Current 480 VGS = 20 V TVJ = 25 ˚C; tPmax limited by TVJmax IF (pulsed) Maximum Pulsed Diode Current 480 VGS = -5 V TVJ op Maximum Virtual Junction Temperature under Switching Conditions -40 150 °C

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 1, 2020-11-11 CAS120M12BM2 4600 Silicon Dr., Durham, NC 27703 MOSFET Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, TVJ = -40 °C VGS(th) Gate Threshold Voltage 1.8 2.6 VDS = VGS, ID = 6 mA IDSS Zero Gate Voltage Drain Current 450 3000 µA VGS = 0 V, VDS = 1200 V IGSS Gate-Source Leakage Current 1.5 VGS = 20 V, VDS = 0 V RDS(on) Drain-Source On-State Resistance (Devices Only) 13.0 16.0 mΩ VGS = 20 V, ID = 120 A Fig. 2 Fig. 323.0 VGS = 20 V, ID = 120 A, TVJ = 150 °C gfs Transconductance 57.4 S VDS = 20 V, IDS = 120 A Fig. 4

54.4 VDS = 20 V, IDS = 120 A, TVJ = 150 °C

Turn-On Switching Energy, TVJ = 25 °C TVJ = 125 °C TVJ = 150 °C 1.39 1.24 1.19 mJ VDS = 600 V, ID = 120 A, VGS = -5 V/+20 V, RG(ext) = 2.5 Ω, L = 22.5 µH Fig. 11 Fig. 13 EOff Turn-Off Switching Energy, TVJ = 25 °C TVJ = 125 °C TVJ = 150 °C 0.86 0.84 0.85 RG(int) Internal Gate Resistance 1.8 Ω VAC = 25 mV, f = 100 kHz Ciss Input Capacitance 6.47 nF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 200 kHz Fig. 9Coss Output Capacitance 0.98 Crss Reverse Transfer Capacitance 43.8 pF QGS Gate to Source Charge 97 nC VDS = 800 V, VGS = -5 V/+20 V ID = 120 A Per IEC60747-8-4 pg 21 QGD Gate to Drain Charge 118 QG Total Gate Charge 378 Rth JC FET Thermal Resistance, Junction to Case 0.125 0.135 °C/W Fig. 17

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 1, 2020-11-11 CAS120M12BM2 4600 Silicon Dr., Durham, NC 27703 Module Physical Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions µΩ TC = 125 °C, Note 2 LStray Stray Inductance 12.9 nH Between Terminals 1 and 3 TC Case Temperature -40 125 °C W Weight 290 g MS Mounting Torque 4 5 5.5 N-m Baseplate, M6-1.0 bolts 4 5 5.5 Power Terminals, M6-1.0 bolts Visol Case Isolation Voltage 5 kV AC, 50 Hz, 1 min Clearance Distance mm Terminal to Terminal

30 Terminal to Baseplate

30 Terminal to Terminal

40 Terminal to Baseplate

Note 2 Total Effective Resistance (Per Switch Position) = MOSFET RDS(on) + Switch Position Package Resistance Diode Characteristics (Per Position) (TVJ = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VF Diode Forward Voltage 1.53 V VGS = -5 V, IF = 120 A, TVJ = 25 °C Fig. 7

1.92 VGS = -5 V, IF = 120 A, TVJ = 150 °C

trr Reverse Recovery Time 21 ns VGS = -5 V, ISD = 120 A, VR = 600 V diF/dt = 12.5 A/ns, TVJ = 150 °C Fig. 32QRR Reverse Recovery Charge 2.2 µC IRRM Peak Reverse Recovery Current 173 A Err Diode Energy TVJ = 25 °C TVJ = 125 °C TVJ = 150 °C 0.75 0.86 0.89 mJ VDS = 600 V, ID = 120 A, VGS = -5 V/+20 V, RG(ext) = 2.5 Ω, L = 22.5 µH Fig. 14Note 1 Rth JC Diode Thermal Resistance, Junction to Case 0.108 0.115 °C/W Fig. 18 Note 1 SiC Schottky diodes do not have reverse recovery energy but still contribute capacitive energy

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 1, 2020-11-11 CAS120M12BM2 4600 Silicon Dr., Durham, NC 27703 Schematic and Pin Out Package Dimensions (mm) CAS120M12BM2 HA1940-A019

Copyright ©2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. 1, 2020-11-11 CAS120M12BM2 4600 Silicon Dr., Durham, NC 27703 Supporting Links & Tools

• CGD1200HB2P-BM2 Evaluation Gate Driver
• CGD12HB00D: Differential Transceiver Board
• CPWR-AN-35: Thermal Interface Material Application Note
• KIT-CRD-CIL12N-BM: Dynamic Performance Evaluation Board for the BM2 and BM3 Module Notes
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems.
• The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special precautions are required to realize optimal performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford optimal switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot.