CAB400M12XM3 WOLFSPEED | Alldatasheet

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Technical content

Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. -, 2019-10-31 CAB400M12XM3 4600 Silicon Dr., Durham, NC 27703 CAB400M12XM3

1200 V, 400 A All-Silicon Carbide

Switching-Loss Optimized, Half-Bridge Module Technical Features

  • High Power Density Footprint
  • High Junction Temperature (175 °C) Operation
  • Low Inductance (6.7 nH) Design
  • Implements Third Generation SiC MOSFET Technology Optimized for Low Switching Loss
  • Silicon Nitride Insulator and Copper Baseplate VDS 1200 V IDS 400 A System Benefits
  • Terminal layout allows for direct bus bar connection without bends or bushings enabling a simple, low inductance design.
  • Isolated integrated temperature sensing enables high-level temperature protection.
  • Dedicated drain Kelvin pin enables direct voltage sensing for gate driver overcurrent protection.

Applications

  • Motor & Traction Drives
  • Vehicle Fast Chargers
  • Uninterruptable Power Supplies
  • Smart-Grid / Grid-Tied Distributed Generation Package 80 x 53 x 19 mm Key Parameters (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VDS max Drain-Source Voltage 1200 VVGS max Gate-Source Voltage, Maximum Value -4 +19 AC frequency ≥ 1 Hz Note 1 VGS op Gate-Source Voltage, Recommended Operating Value -4 +15 Static IDS DC Continuous Drain Current 395 A VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C Fig. 20

298 VGS = 15 V, TC = 90 ˚C, TVJ ≤ 175 ˚C Note 2

ISD DC Source-Drain Current 395 VGS = 15 V, TC = 25 ˚C, TVJ ≤ 175 ˚C ISD BD DC Source-Drain Current (Body Diode) 220 VGS = - 4 V, TC = 25 ˚C, TVJ ≤ 175 ˚C IDS pulsed Maximum Pulsed Drain-Source Current 800 tP max limited by Tj max VGS = 15 V, TC = 25 ˚CISD pulsed Maximum Pulsed Source-Drain Current 800 TVJ op Maximum Virtual Junction Temperature under Switching Conditions -40 175 °C Note 1 If MOSFET body diode is not used, VGS max = -8/+19 V Note 2 Assumes RTH JC = 0.15 °C/W and RDS on = 6.4 mΩ. Calculate PD = (TVJ – TC) / RTH JC. Calculate ID max = √(PD / RDS on)

Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. -, 2019-10-31 CAB400M12XM3 4600 Silicon Dr., Durham, NC 27703 MOSFET Characteristics (Per Position) (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VBR DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 400 μA VGS th Gate Threshold Voltage 1.8 2.5 3.6 VDS = VGS, ID = 92 mA

2.0 VDS = VGS, ID = 92 mA, TJ = 175 °C

IDSS Zero Gate Voltage Drain Current 4 130 μA VGS = 0 V, VDS = 1200 V IGSS Gate-Source Leakage Current 0.04 1.0 VGS = 15 V, VDS = 0 V RDS on Drain-Source On-State Resistance (Devices Only) 4.0 5.3 mΩ VGS = 15 V, ID = 400 A Fig. 2 Fig. 36.4 VGS = 15 V, ID = 400 A, TJ = 175 °C gfs Transconductance 278 S VDS = 20 V, IDS = 400 A Fig. 4

260 VDS = 20 V, IDS = 400 A, TJ = 175 °C

Turn-On Switching Energy, TJ = 25 °C TJ = 125 °C TJ = 175 °C 4.1 5.0 5.6 mJ VDS = 600 V, ID = 400 A, VGS = -4 V/15 V, RG(ext) = 0.0 Ω, L = 13.6 μH Fig. 11 Fig. 13 Eoff Turn-Off Switching Energy, TJ = 25 °C TJ = 125 °C TJ = 175 °C 3.9 4.2 4.1 RG int Internal Gate Resistance 1.4 Ω Ciss Input Capacitance 24.5 nF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz Fig. 9Coss Output Capacitance 1.0 Crss Reverse Transfer Capacitance 50 pF QGS Gate to Source Charge 256 nC VDS = 800 V, VGS = -4 V/15 V ID = 400 A Per IEC60747-8-4 pg. 21 QGD Gate to Drain Charge 308 QG Total Gate Charge 908 RTH JC FET Thermal Resistance, Junction to Case 0.15 0.16 °C/W Fig. 17 Body Diode Characteristics (Per Position) (TC = 25˚C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Test Conditions Note VSD Body Diode Forward Voltage 6.0 V VGS = -4 V, ISD = 400 A Fig. 7

5.3 VGS = -4 V, ISD = 400 A, TJ = 175 °C

tRR Reverse Recovery Time 44 ns VGS = -4 V, ISD = 400 A, VR = 600 V di/dt = 13 A/ns, TJ = 175 °CQRR Reverse Recovery Charge 6.5 μC IRR Peak Reverse Recovery Current 218 A ERR Reverse Recovery Energy, TJ = 25 °C TJ = 125 °C TJ = 175 °C 0.3 1.0 1.9 mJ VDS = 600 V, ID = 400 A, VGS = -4 V/15 V, RG(ext) = 0.0 Ω, L= 13.6 μH Fig. 14

Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. -, 2019-10-31 CAB400M12XM3 4600 Silicon Dr., Durham, NC 27703 Temperature Sensor (NTC) Characteristics Module Physical Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions mΩ TC = 125 °C, Note 3 & 41 Lstray Stray Inductance 6.7 nH Between Terminals 2 and 3 TC Case Temperature -40 125 °C W Weight 175 g MS Mounting Torque 2.0 3.0 4.0 N-m Baseplate, M4 bolts 2.0 4.0 5.0 Power Terminals, M5 bolts Visol Case Isolation Voltage 4.0 kV AC, 50 Hz, 1 min CTI Comparative Tracking Index 600 Clearance Distance 12.5 mm From 2 to 3, Note24

11.5 From 1 to Baseplate, Note 4

5.7 From 2 to 5, Note 4

13.7 From 5 to Baseplate, Note 4

14.7 From 2 to 3, Note 4

14.0 From 1 to Baseplate, Note 4

14.7 From 2 to 5, Note 4

14.3 From 5 to Baseplate, Note 4

Note13 Total Effective Resistance (Per Switch Position) = MOSFET RDS on + Switch Position Package Resistance. Note24 Numbers reference the connections from the Schematic and Package Dimensions sections of this document. Steinhart-Hart Modified Coefficients for R/T Computation: A B C D TNTC < 25 °C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07 TNTC ≥ 25 °C 3.3540E-03 3.0013E-04 5.0852E-06 2.1877E-07 Symbol Parameter Min. Typ. Max. Unit Test Conditions R25 Rated Resistance 4.7 kΩ TNTC = 25 °C ∆R/R Tolerance of R25 ±1 % P25 Maximum Power Dissipation 50 mW

Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. -, 2019-10-31 CAB400M12XM3 4600 Silicon Dr., Durham, NC 27703 Schematic and Pin Out Package Dimension (mm) D D C C B B A A 8,9 Title Size Document Number Rev Date: Sheet of <Doc> <RevCode> <Title> Custom 11Wednesday, May 15, 2019 Title Size Document Number Rev Date: Sheet of <Doc> <RevCode> <Title> Custom 11Wednesday, May 15, 2019 Title Size Document Number Rev Date: Sheet of <Doc> <RevCode> <Title> Custom 11Wednesday, May 15, 2019 NTC 53.00 ±0.20 44.75 ±0.20 80.00 ±0.20 71.75 ±0.20 4.50 ±0.20 29.50 ±0.20 12.50 ±0.20 5.50 ±0.40 1.50 ±0.20 44.00 ±0.30 12.50 ±0.30 15.75 ±0.30 3.00 ±0.20 12.00 ±0.30 0.64 0.64 2.54 2.54 CREE CONFIDENTIAL This plot and the information contained within are the proprietary and confidential information of Cree, Inc. This plot may not be copied, reproduced, or disclosed to any unauthorized person without the written consent of Cree, Inc. Cree Fayetteville 535 W. Research Center Blvd. Fayetteville, AR 72701 DATASHEET DRAWING PART # APM-011-000 REV 1DRAWN BY CHECK APPROVED BMC 2/7/2019 UNLESS OTHERWISE SPECIFIED THIRD ANGLE PROJECTION ±.XX 0.25 DIMENSIONS mm TOLERANCE SIZE .XXX 0.125 0.5° A A B B C C D D C NOT TO SCALE SHEET 1 OF 2 Wolfspeed, A Cree Company 53.00 ±0.20 44.75 ±0.20 80.00 ±0.20 71.75 ±0.20 4.50 ±0.20 29.50 ±0.20 12.50 ±0.20 5.50 ±0.40 1.50 ±0.20 44.00 ±0.30 12.50 ±0.30 15.75 ±0.30 3.00 ±0.20 12.00 ±0.30 0.64 0.64 2.54 2.54 CREE CONFIDENTIAL This plot and the information contained within are the proprietary and confidential information of Cree, Inc. This plot may not be copied, reproduced, or disclosed to any unauthorized person without the written consent of Cree, Inc. Cree Fayetteville 535 W. Research Center Blvd. Fayetteville, AR 72701 DATASHEET DRAWING PART # APM-011-000 REV 1DRAWN BY CHECK APPROVED BMC 2/7/2019 UNLESS OTHERWISE SPECIFIED THIRD ANGLE PROJECTION ±.XX 0.25 DIMENSIONS mm TOLERANCE SIZE .XXX 0.125 0.5° A A B B C C D D C NOT TO SCALE SHEET 1 OF 2 Wolfspeed, A Cree Company

Copyright ©2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo, Wolfspeed®, and the Wolfspeed logo are registered trademarks of Cree, Inc. Rev. -, 2019-10-31 CAB400M12XM3 4600 Silicon Dr., Durham, NC 27703 Package Dimension (mm) Power Terminal Screw Maximum Penetration Depth Supporting Links & Tools

  • CGD12HBXMP: XM3 Evaluation Gate Driver
  • CGD12HB00D: Differential Transceiver Board for CGD12HBXMP
  • CRD200DA12E-XM3: 200 kW Inverter Kit for Conduction-Optimized XM3 (CPWR-AN30)
  • KIT-CRD-CIL12N-XM3: Dynamic Performance Evaluation Board for the XM3 Module (CPWR-AN31)
  • CPWR-AN28: Module Mounting Application Note
  • CPWR-AN29: Thermal Interface Material Application Note Notes
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems.
  • The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT-based modules. Therefore, special precautions are required to realize optimal performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford optimal switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and DC link capacitors to avoid excessive VDS overshoot. EE F SECTION E-E 5.50 DETAIL F SCALE 4 : 1 Maximum Penetration Depth [mm] A A B B DO NOT SCALE DRAWING SHEET 1 OF 1 UNLESS OTHERWISE SPECIFIED: SCALE: 1:1 WEIGHT: REVDWG. NO. A SIZE TITLE: NAME DATE COMMENTS: Q.A. MFG APPR. ENG APPR. CHECKED DRAWN FINISH MATERIAL INTERPRET GEOMETRIC TOLERANCING PER: DIMENSIONS ARE IN INCHES TOLERANCES: FRACTIONAL ANGULAR: MACH BEND TWO PLACE DECIMAL THREE PLACE DECIMAL APPLICATION USED ONNEXT ASSY PROPRIETARY AND CONFIDENTIAL THE INFORMATION CONTAINED IN THIS DRAWING IS THE SOLE PROPERTY OF <INSERT COMPANY NAME HERE>. ANY REPRODUCTION IN PART OR AS A WHOLE WITHOUT THE WRITTEN PERMISSION OF <INSERT COMPANY NAME HERE> IS PROHIBITED.