CA3018 HARRIS | Alldatasheet

Document overview

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Technical content

Features

  • Matched Monolithic General Purpose Transistors
  • V BE Matched
  • Operation From DC to 120MHz
  • Wide Operating Current Range
  • CA3018A Performance Characteristics Controlled from 10µA to 10mA oC to 125oC

Applications

  • Two Isolated Transistors and a Darlington Connected Transistor Pair for Low Power Applications at Frequencies from DC through the VHF Range
  • Custom Designed Differential Amplifiers
  • Temperature Compensated Amplifiers
  • See Application Note, AN5296 “Application of the CA3018 Integrated Circuit Transistor Array” for Suggested Applica- tions Pinout CA3018, CA3018A (METAL CAN) TOP VIEW Part Number Information PART NUMBER TEMP. RANGE ( oC) PACKAGE PKG. NO. CA3018 (obsolete) -55 to 125 12 Pin Metal Can T12.B CA3018A -55 to 125 12 Pin Metal Can T12.B 12

1 Q 4

January 1999 File Number 338.5 [ /Title /Sub- ject () /Autho r () /Key- words /Cre- ator () /DOCI NFO pdf- mark /Page- Mode /Use- Out- lines /DOC- VIEW pdf- mark OBSOLETE PRODUCT NO RECOMMENDED REPLA CEMENT Call Central Applications 1-800-442-7747or email: centapp@harris.com

Absolute Maximum Ratings Thermal Information CA3018 CA3018A Collector-to-Substrate Voltage, VCIO (Note 1). . 20V 40V Operating Conditions Thermal Resistance (Typical, Note 2)θJA (oC/W) θJC (oC/W) oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationo ft h e device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode. The substrate (Terminal 10) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor ac- tion. 2. θ JA is measured with the component mounted on an evaluation PC board in free air. Electrical SpecificationsTA = 25oC PARAMETER SYMBOL TEST CONDITIONS CA3018 CA3018A UNITSMIN TYP MAX MIN TYP MAX DC CHARACTERISTICS Collector Cutoff Current (Figure 1) I CBO VCB = 10V, IE = 0 - 0.002 100 - 0.002 40 nA Collector Cutoff Current (Figure 2) I CEO VCE = 10V, IB = 0 - See Fig. 2 5 - See Fig. 2 0.5 µA Collector Cutoff Current Darlington Pair ICEOD VCE = 10V, IB = 0 -----5 µA Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - 15 24 - V Collector-to-Base Breakdown Voltage V (BR)CBO IC = 10µA, IE = 0 20 60 - 30 60 - V Emitter-to-Base Breakdown Voltage V (BR)EBO IE = 10µA, IC = 0 5 7 - 5 7 - V Collector-to-Substrate Breakdown Voltage V(BR)CIO IC = 10µA, ICI = 0 20 60 - 40 60 - V Collector-to-Emitter Saturation Voltage VCES IB = 1mA, IC = 10mA - 0.23 - - 0.23 0.5 V Forward Current Transfer Ratio (Note 3) (Figure 3) hFE VCE = 3V IC = 10mA - 100 - 50 100 - - IC = 1mA 30 100 200 60 100 200 - IC = 10µA - 54 - 30 54 - - Magnitude of Static-Beta Ratio (Isolated Transistors Q1 and Q2) (Figure 3) VCE = 3V, IC1 = IC2 = 1mA Forward Current Transfer Ratio Darling- ton Pair (Q3 and Q4) (Figure 4) hFED VCE = 3V IC = 1mA 1500 5400 - 2000 5400 - - IC = 100µA - - - 1000 2800 - - Base-to-Emitter Voltage (Figure 5) V BE VCE = 3V IE = 1mA - 0.715 - 0.600 0.715 0.800 V IE = 10mA - 0.800 - - 0.800 0.900 V Input Offset Voltage (Figures 5, 7) V CE = 3V, IE = 1mA - 0.48 5 - 0.48 2 mV Temperature Coefficient: Base-to-Emitter Voltage Q1, Q2 (Figure 6) VCE = 3V, IE = 1mA - -1.9 - - -1.9 - mV/ oC V BE1 V– BE2 Δ V BE CA3018, CA3018A

Base (Q3)-to-Emitter (Q4) Voltage Dar- lington Pair (Figure 8) VBED (V9-1)V CE = 3V IE = 10mA - 1.46 - - 1.46 1.60 V IE = 1mA - 1.32 - 1.10 1.32 1.50 V Temperature Coefficient: Base-to-Emitter Voltage Darlington Pair (Q3 and Q4) (Figure 9) VCE = 3V, IE = 1mA - 4.4 - - 4.4 - mV/ oC Temperature Coefficient: Magnitude of Input Offset Voltage VCC = 6V, VEE = -6V, IC1 = IC2 = 1mA -1 0- -1 0- µV/oC DYNAMIC CHARACTERISTICS Low Frequency Noise Figure (Figures 10 - 12) NF f = 1kHz, V CE = 3V, IC = 100µA, Source Resistance = 1kΩ Low Frequency, Small Signal Equivalent Circuit Characteristics Forward Current Transfer Ratio (Figure 13) hFE f = 1kHz, VCE = 3V, IC = 1mA - 110 - - 110 - - Short Circuit Input Impedance (Figure 13) hIE f = 1kHz, VCE = 3V, IC = 1mA Open Circuit Output Impedance (Figure 13) hOE f = 1kHz, VCE = 3V, IC = 1mA Open Circuit Reverse Voltage Transfer Ratio (Figure 13) hRE f = 1kHz, VCE = 3V, IC = 1mA - 1.8 x 10-4 - - 1.8 x 10-4 Admittance Characteristics Forward Transfer Admittance (Figure 14) YFE f = 1MHz, VCE = 3V, IC = 1mA - 31 - j1.5 - - 31 - j1.5 -m S Input Admittance (Figure 15) Y IE f = 1MHz, VCE = 3V, IC = 1mA - 0.3 + j0.04 - - 0.3 + j0.04 -m S Output Admittance (Figure 16) Y OE f = 1MHz, VCE = 3V, IC = 1mA - 0.001 + j0.03 - - 0.001 + j0.03 -m S Reverse Transfer Admittance (Figure 17) YRE f = 1MHz, VCE = 3V, IC = 1mA See Figure 17 mS Gain Bandwidth Product (Figure 18) f T VCE = 3V, IC = 3mA 300 500 - 300 500 - MHz Emitter-to-Base Capacitance C EB VEB = 3V, IE = 0 - 0.6 - - 0.6 - pF Collector-to-Base Capacitance C CB VCB = 3V, IC = 0 - 0.58 - - 0.58 - pF Collector-to-Substrate Capacitance C CI VCI = 3V, IC = 0 - 2.8 - - 2.8 - pF NOTE: 3. Actual forcing current is via the emitter for this test. Electrical SpecificationsTA = 25oC (Continued) PARAMETER SYMBOL TEST CONDITIONS CA3018 CA3018A UNITSMIN TYP MAX MIN TYP MAX Δ V BED V BE1 V BE2– CA3018, CA3018A

FIGURE 1. TYPICAL COLLECTOR-TO-BASE CUTOFF CURRENT FIGURE 2. TYPICAL COLLECTOR-TO-EMITTER CUTOFF FIGURE 3. TYPICAL STATIC FORWARD CURRENT TRANSFER FIGURE 4. TYPICAL STATIC FORWARD CURRENT - TRANSFER

3 AND Q4 vs EMITTER CURRENT

FIGURE 5. TYPICAL STATIC BASE-TO-EMITTER VOLTAGE

1 AND Q 2 vs EMITTER CURRENT

FIGURE 6. TYPICAL BASE-TO-EMITTER VOLTAGE