2SC945 MICRO-ELECTRONICS | Alldatasheet
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— ASE 2SC 945 EE SYOSCOZ: - ey AD PF ; NPN SILICON PLANAR EPITAXIAL TRANSISTOR [Pee (MICRo Slee RONics | | 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL CASE TO-92B | TRANSISTOR DESIGNED FOR AUDIO FREQUENCY = AMPLIFIER. IT IS COMPLEMENTARY TO THE PNP I TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS a ECB Collector-Base Voltage VcBO 60V Collector-Emitter Voltage VCEO 50V Emitter-Base Voltage VEBO 5V Collector Current Ig (pe) 100mA Collector Current Ic (PULSE)* 200mA Base Current Ip(pC) 20mA Base Current IB(PULSE) * 40mA Total Power Dissipation @ TA=25°C Ptot 2500W Operating Junction & Storage Temperature Tj, Tstg -55 to +125°C O : "ELECTRICAL CHARACTERISTICS @ Ta=25°C PARAMETER [smo [aw vax [urn | rest conprtroxs Collector Cutoff Current IcBo 100 | nA VcB=60V Ip-0 Collector Cutoff Current IgEO 1 pA Vcr=40vV Ip.0 Emitter Cutoff Current IEBO 100 | nA | VEB=5V Ic=0 Collector-Emitter Saturation Voltage] VcR(SAT 0.3] V Ic=100mA IB=10mA Base-Emitter Saturation Voltage VBE(SAT 1] Vv Ic=100mA Ip=10mA) Base-Emitter Voltage VBE 0.55 0.65} V Ic=lmA VCE=6¥ D.C. Current Gain HFE1 * 50 Ic=0.1mA VCE=6V D.C. Current Gain HFE2 ** | 90 600 Ic=1mA - VCE=6V Current Gain-Bandwidth Product fT 150 450 | MHz | -Ig=10mA VcE=6V Output Capacitance Cob 5 | pF VcB=6V IE=0 f=1MHz Noise Figure NF 15 | @B Ic=0.1mA VCE=6V f=1kKHz RG=2kn. * Pulse Test : Pulse Width<10mS, Duty Cycle<50% : ** Hppo is classified as follows: . : ©) GROUP R: 90-180 GROUP Q : 135-270 GROUP P : 200-400 : GROUP K : 300-600 38 HUNG TO ROAD, KWUN TONG, HONG KONG. TELEX 43510 MICRO ELECTRONICS LTD. , wen tone P. 0. B0x69477 CABLE ADDRESS “MICROTRON” “TELEPHONE:- 3-430181-6 —S~8S3363,—Srost42s
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