C945 HTSEMI | Alldatasheet
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z Excellent h FE Linearity z Low noise z Complementary to A733 MARKING:CR· MAXIMUM RATINGS (T A =25℃ unless otherwise noted) Symbol Parameter Value Units V CBO Collector-Base Voltage 60 V V CEO Collector-Emitter Voltage 50 V V EBO Emitter-Base Voltage 5 V I C Collector Current -Continuous 150 mA P C Collector Power Dissipation 200 mW T J Junction Temperature 150 ℃ T stg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) P a r a m e t e r S y m b o l T e s t c o n d i t i o n s M I N T Y P M A X U N I T Collector-base breakdown voltage V(BR) CBO I C =100uA, I E =0 60 V Collector-emitter breakdown voltage V(BR) CEO I C =1mA , I B =0 50 V Emitter-base breakdown voltage V(BR) EBO I E =0.1mA, I C =0 5 V Collector cut-off current I CBO V CB =60V, I E =0 0.1 uA Collector cut-off current I CER V CE =55V,R=10MΩ 0.1 uA Emitter cut-off current I EBO V EB =5V , I C =0 0.1 uA h FE(1) V CE =6 V , I C =1mA 130 400 DC current gain h FE(2) V CE =6 V , I C =0.1mA 40 Collector-emitter saturation voltage V CE (sat) I C =100mA, I B =10mA 0.3 V Base-emitter saturation voltage V BE (sat) I C =100mA, I B =10mA 1 V Transition frequency f T V CE =6V,I C =10mA,f =30 MHz 150 MHz Collector output capacitance C ob V CB =10V,I E =0,f=1MH Z 3.0 pF Noise figure NF V CE 6V,I C =0.1 mA R g =10 kΩ ,f=1k MH Z 4 10 dB CLASSIFICATION OF h FE(1) Rank L H Range 130-200 200-400 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR C945 TRANSISTOR (NPN) Date:2011/05 www.htsemi.comsemiconductor JinYu
Date:2011/05 www.htsemi.comsemiconductor JinYu C945