C945 HOTTECH | Alldatasheet
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Page:P2-P1 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. FE A TURES Complementary to A733 MARKING :C R MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol V alue Unit Collector-Base V oltage V CBO 60 V Collector-EmitterV oltage V CE O 50 V Emitter-Base V oltage V EBO 5 V Collector Current-Continuous IC 150 m A Collector Pow er Dissipation PC 0.4 W Junction Temperature TJ 150 StorageTemp erature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Param eter Symbol Test conditions M in T yp M ax U nit Collector-base breakdow n voltage V CBO IC =1mA , IE=0 60 V Collector-emitter breakdow n voltage V CEO IC =100uA , IB =0 50 V Emitter-base breakdow n voltage V EBO IE=100mA, IC =0 5 V Collector cut-off current ICB O V CB =60V , IE=0 0.1 uA Collector cut-off current ICE O V CE =45V 0.1 uA Emittercut-offcurrent IEB O V EB =5V , IC =0 0.1 uA DC current gain hFE(1) V CE =6 V , IC =1mA 70 700 hFE(2) V CE =6 V , IC =0.1mA 40 Collector-emitter saturationvoltage V CE(sat) IC =100mA, IB =10mA 0.3 V Base-emitter saturationvoltage V BE(sat) IC =100mA, IB =10mA 1 V Transition frequency fT V CE =6V ,IC =10mA,f =30 MHz 200 MHz Collector output capacitance Cob V CB =10V ,IE=0,f=1MH Z 3.0 pF Noise figure NF V CE =6V,IC =0.1mA R G =10kΩ,f=1kMH Z 10 dB CLASS IFICATION OF hFE Rank O Y GR BL R ange 70-140 120-240 200-400 350-700 (N PN ) 1. BASE 2. EMITTER SOT -23 3. COLLECTO C945
Page:P2-P2 Plastic-Encapsulate Transistors GUANGDONG HOTTECH INDUSTRIAL CO,. LTD. Typical Characteristics C945