C6D16065D WOLFSPEED | Alldatasheet

Document overview

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  • PDF pages: 6

Technical content

Features

  • New 6th Generation Technology
  • Low Forward Voltage Drop (VF)
  • Zero Reverse Recovery Current
  • Zero Forward Recovery Voltage
  • Low Leakage Current (Ir)
  • Temperature-Independent Switching Behavior
  • Positive Temperature Coefficient on VF Benefits
  • Higher System Level Efficiency
  • Increase System Power Density
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway

Applications

  • Switch Mode Power Supplies (SMPS)
  • Battery Charging Systems
  • Industrial Power Supplies
  • Server/Telecom Power Supplies
  • Solar Package TO-247-3 Part Number Package Marking C6D16065D TO-247-3 C6D16065 VRRM = 650 V IF (TC=157˚C) = 16 A** Qc = 29 nC* Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 650 V VDC DC Blocking Voltage 650 V IF Continuous Forward Current (Per Leg/Device) 32*/64** 16*/32** 8*/16** A TC=25˚C TC=129˚C TC=157˚C Fig. 3 IFRM Repetitive Peak Forward Surge Current 38* 23* A TC=25˚C, tP = 10 ms, Half Sine Wave TC=110˚C, tP=10 ms, Half Sine Wave IFSM Non-Repetitive Peak Forward Surge Current 69* 63* A TC=25˚C, tp = 10 ms, Half Sine Wave TC=110˚C, tp = 10 ms, Half Sine Wave Fig. 8 IF,Max Non-Repetitive Peak Forward Surge Current 860* 790* A TC=25˚C, tP = 10 µs, Pulse TC=110˚C, tP = 10 µs, Pulse Fig. 8 Ptot Power Dissipation 100* 43* W TC=25˚C TC=110˚C Fig. 4 TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C TO-247 Mounting Torque 1 8.8 Nm lbf-in M3 Screw 6-32 Screw * Per Leg, ** Per Device

C6D16065D, Rev. 2, 10-2020

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.27* 1.37* 1.50* 1.60* V IF = 8 A TJ=25°C IF = 8 A TJ=175°C Fig. 1 IR Reverse Current 2* 15* 40* 160* μA VR = 650 V TJ=25°C VR = 650 V TJ=175°C Fig. 2 QC Total Capacitive Charge 29* nC VR = 400 V, TJ = 25°C Fig. 5 C Total Capacitance 517* 56* 43* pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 4.3* μJ VR = 400 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note RθJC Thermal Resistance from Junction to Case 1.5* 0.75** °C/W Fig. 9 *Per Leg, ** Per Device Typical Performance (Per Leg) Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

C6D16065D, Rev. 2, 10-2020 Package Dimensions Package TO-247-3 NOTE ; 1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT 2. DIMENSIONING & TOLERANCEING CONFIRM TO ASME Y14.5M-1994. 3. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES. 4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT OF JEDEC outlines TO-247 AD. 1 - GATE 2 - DRAIN (COLLECTOR) 3 - SOURCE (EMITTER) 4 - DRAIN (COLLECTOR) TITLE: SHEET COMPANY ASE Weihai

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Engineering Weihai, Inc. PACKAGE OUTLINE ISSUE DATE DWG NO. 98WHP03165A O Sep.05, 2016 TO-247 3LD, Only For Cree Recommended Solder Pad Layout TO-247-3 POS Inches Millimeters Min Max Min Max A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b3 .113 .133 2.87 3.38 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 E2 .145 .201 3.68 5.10 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC 5.44 BSC L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 N 3 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 17.5° REF W 3.5° REF X 4° REF e all units are in inches Part Number Package Marking C6D16065D TO-247-3 C6D16065 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering

C6D16065D, Rev. 2, 10-2020 Copyright © 2020 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the thresh- old limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfpseed representative or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen- tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Notes
  • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
  • Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
  • SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Related Links