2SC5802 SAVANTIC | Alldatasheet
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Technical content
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5802
DESCRIPTION
- With TO-3P(H)IS package
- High voltage;high speed
- Wide area of safe operation
APPLICATIONS
- For high voltage color display horizontal deflection output applications PINNING PIN DESCRIPTION
1 Base
2 Collector
3 Emitter
Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V IC Collector current 10 A ICM Collector current-Peak 30 A PC Total power dissipation T C=25 60 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Fig.1 simplified outline (TO-3P(H)IS) and symbol
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5802 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage I C=6A; IB=1.5A 3.0 V VBEsat Base-emitter saturation voltage I C=6A; IB=1.5A 1.5 V ICES Collector cut-off current V CE=1400V; VBE=0 1.0 mA ICBO Collector cut-off current V CB=800V; IE=0 10 µA IEBO Emitter cut-off current V EB=4V; IC=0 1.0 mA hFE-1 DC current gain I C=1A ; VCE=5V 15 48 hFE-2 DC current gain I C=6A ; VCE=5V 7 10 tf Fall time VCC=200V; IC=6A;IB1=1.2A
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC5802 PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)