C4D10120E WOLFSPEED | Alldatasheet

Document overview

  • PDF pages: 6

Technical content

Features

  • 1.2kV Schottky Rectifier
  • Zero Reverse Recovery Current
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • Extremely Fast Switching
  • Positive Temperature Coefficient on VF Benefits
  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway

Applications

  • Solar Inverters
  • Switch Mode Power Supplies (SMPS)
  • Boost diodes in PFC or DC/DC stages
  • Free Wheeling Diodes in Inverter stages
  • AC/DC converters Package TO-252-2 Part Number Package Marking C4D10120E TO-252-2 C4D10120 PIN 1 PIN 2 CASE Maximum Ratings (TC=25°C unless otherwise specified) Symbol Parameter Value Unit Test Conditions Note VRRM Repetitive Peak Reverse Voltage 1200 V VRSM Surge Peak Reverse Voltage 1300 V VDC DC Blocking Voltage 1200 V IF Continuous Forward Current A TC=25˚C TC=135˚C TC=156˚C Fig. 3 IFRM Repetitive Peak Forward Surge Current 47

31.5 A TC=25˚C, tP=10 ms, Half Sine pulse

TC=110˚C, tP=10 ms, Half Sine pulse IFSM Non-Repetitive Peak Forward Surge Current 71

59 A TC=25˚C, tP=10 ms, Half Sine pulse

TC=110˚C, tP=10 ms, Half Sine pulse Fig. 8 IF,Max Non-Repetitive Peak Forward Current 750

620 A TC=25˚C, tP=10 ms, Pulse

TC=110˚C, tP=10 ms, Pulse Fig. 8 Ptot Power Dissipation 166.5

72 W TC=25˚C

TC=110˚C Fig. 4 dV/dt Diode dV/dt ruggedness 200 V/ns VR=0-960V ∫i2dt i2t value 25

17.5 A2s TC=25˚C, tP=10 ms

TC=110˚C, tP=10 ms TJ , Tstg Operating Junction and Storage Temperature -55 to +175 ˚C VRRM = 1200 V IF (TC=135˚C) = 16 A Qc = 52 nC

C4D10120E Rev. G, 01-2017

Electrical Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions Note VF Forward Voltage 1.5 2.2 1.8

3 V IF = 10 A TJ=25°C

IF = 10 A TJ=175°C Fig. 1 IR Reverse Current 30 250 350 μA VR = 1200 V TJ=25°C VR = 1200 V TJ=175°C Fig. 2 QC Total Capacitive Charge 52 nC VR = 800 V, IF = 10A di/dt = 200 A/μs TJ = 25°C Fig. 5 C Total Capacitance 754 pF VR = 0 V, TJ = 25°C, f = 1 MHz VR = 400 V, TJ = 25˚C, f = 1 MHz VR = 800 V, TJ = 25˚C, f = 1 MHz Fig. 6 EC Capacitance Stored Energy 14.5 μJ VR = 800 V Fig. 7 Note: This is a majority carrier diode, so there is no reverse recovery charge. Thermal Characteristics Symbol Parameter Typ. Unit Note RθJC Thermal Resistance from Junction to Case 0.9 °C/W Fig.9 Typical Performance Figure 1. Forward Characteristics Figure 2. Reverse Characteristics

Figure 7. Typical Capacitance Stored Energy Figure 8. Non-repetitive peak forward surge current Figure 9. Transient Thermal Impedance

0.01 SinglePulse

C4D10120E Rev. G, 01-2017 Recommended Solder Pad Layout Part Number Package Marking C4D10120E TO-252-2 C4D10120 TO-252-2 Package Dimensions Package TO-252-2 Note: Recommended soldering profiles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering θ Tjb June 2015 MX+DI+PSI SYMBOL MILLIMETERS MIN MAX A 2.159 2.413 A1 0 0.13 b 0.64 0.89 b2 0.653 1.143 b3 5.004 5.6 c 0.457 0.61 c2 0.457 0.864 D 5.867 6.248 D1 5.21 - E 6.35 7.341 E1 4.32 - e 4.58 BSC H 9.65 10.414 L 1.106 1.78 L2 0.51 BSC L3 0.889 1.27 L4 0.64 1.01 θ 0° 8° Tjb June 2015 MX+DI+PSI

C4D10120E Rev. G, 01-2017 Copyright © 2017 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. Cree, Inc.

4600 Silicon Drive

Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power

  • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RRoHS Declarations for this product can be obtained from your Wolfspeed representative or from the Product Ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology.
  • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi- cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request.
  • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. Notes
  • Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/Power/Products#SiCSchottkyDiodes
  • Schottky diode Spice models: http://www.wolfspeed.com/power/tools-and-support/DIODE-model-request2
  • SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i Related Links Diode Model Note: Tj = Diode Junction Temperature In Degrees Celsius, valid from 25°C to 175°C VT RT Diode Model CSD04060 Vf T = VT + If*RT VfT = VT+If*RT